Invention Grant
- Patent Title: Voids in STI regions for forming bulk FinFETs
- Patent Title (中): 在STI区域中形成大块FinFET的空隙
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Application No.: US12612442Application Date: 2009-11-04
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Publication No.: US08519481B2Publication Date: 2013-08-27
- Inventor: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions.
Public/Granted literature
- US20110084340A1 Voids in STI Regions for Forming Bulk FinFETs Public/Granted day:2011-04-14
Information query
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