发明授权
US08519496B2 Spin-transfer torque magnetic random access memory with multi-layered storage layer
有权
具有多层存储层的自旋转矩磁性随机存取存储器
- 专利标题： Spin-transfer torque magnetic random access memory with multi-layered storage layer
- 专利标题（中）： 具有多层存储层的自旋转矩磁性随机存取存储器
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申请号： US13035857申请日： 2011-02-25
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公开(公告)号： US08519496B2公开(公告)日： 2013-08-27
- 发明人: Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
- 申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
- 申请人地址： US CA Fremont
- 专利权人： Avalanche Technology, Inc.
- 当前专利权人： Avalanche Technology, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： IPxLAW Group LLP
- 代理商 Maryam Imam
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
公开/授权文献
- US20120087185A1 MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) 公开/授权日：2012-04-12
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