Copper blend I-VII compound semiconductor light-emitting devices

Invention Grant

US08524517B2 Copper blend I-VII compound semiconductor light-emitting devices 有权

Title translation: 铜掺合物I-VII化合物半导体发光器件

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Patent Title: Copper blend I-VII compound semiconductor light-emitting devices
Patent Title (中): 铜掺合物I-VII化合物半导体发光器件
Application No.: US13279945

Application Date: 2011-10-24
Publication No.: US08524517B2

Publication Date: 2013-09-03
Inventor: Doyeol Ahn
Applicant: Doyeol Ahn
Applicant Address: KR Seoul
Assignee: University of Seoul Industry Cooperation Foundation
Current Assignee: University of Seoul Industry Cooperation Foundation
Current Assignee Address: KR Seoul
Main IPC: H01L21/00
IPC: H01L21/00

Copper blend I-VII compound semiconductor light-emitting devices

Abstract:

Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.

Abstract(Chinese):

通常公开了包括一种或多种铜共混物I-VII化合物半导体材料阻挡层的半导体发光器件的实施和技术。

Public/Granted literature

US20120040483A1 Copper Blend I-VII Compound Semiconductor Light-Emitting Devices Public/Granted day:2012-02-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备