发明授权
- 专利标题： Methods of forming an isolation layer and methods of manufacturing semiconductor devices having an isolation layer
- 专利标题（中）： 形成隔离层的方法和制造具有隔离层的半导体器件的方法
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申请号： US13109527申请日： 2011-05-17
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公开(公告)号： US08524569B2公开(公告)日： 2013-09-03
- 发明人: Dae-Hyuk Kang , Jung-Won Lee , Bo-Un Yoon , Kun-Tack Lee
- 申请人： Dae-Hyuk Kang , Jung-Won Lee , Bo-Un Yoon , Kun-Tack Lee
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2010-0045900 20100517
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/331 ; H01L21/336
摘要：
In a method of forming an isolation layer, first and second trenches are formed on a substrate. The first and the second trenches have first and second widths, respectively, and the second width is greater than the first width. A second isolation layer pattern partially fills the second trench. A first isolation layer pattern and the third isolation layer pattern are formed. The first isolation layer pattern fills the first trench, and the third isolation layer pattern is formed on the second isolation layer pattern and fills a remaining portion of the second trench.
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