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发明授权
US08525244B2 Germanium compound, semiconductor device fabricated using the same, and methods of forming the same 有权
锗化合物，使用其制造的半导体器件及其形成方法

Germanium compound, semiconductor device fabricated using the same, and methods of forming the same
摘要：
A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeR1xR2y. “R1” is an alkyl group, and “R2” is one of hydrogen, amino group, allyl group and vinyl group. “x” is greater than zero and less than 4, and the sum of “x” and “y” is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.
摘要（中）：

提供锗（Ge）化合物。 Ge化合物具有化学式GeR1×R2y。 “R1”为烷基，“R2”为氢，氨基，烯丙基和乙烯基之一。 “x”大于零且小于4，“x”和“y”之和等于4. Ge化合物的形成方法，使用Ge化合物的相变存储器件的制造方法以及相 还提供了使用Ge化合物制造的更换存储器件。

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