发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
-
申请号： US13610171申请日： 2012-09-11
-
公开(公告)号： US08526229B2公开(公告)日： 2013-09-03
- 发明人: Hiroyuki Takahashi , Naoki Ookuma
- 申请人： Hiroyuki Takahashi , Naoki Ookuma
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Foley & Lardner LLP
- 优先权： JP2009-246322 20091027
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A semiconductor memory device includes a power supply circuit configured to supply an intermediate voltage between a power supply voltage and a ground voltage to each of a plurality of memory cells. The power supply circuit firsts generates a first intermediate voltage between the power supply voltage and the ground voltage and a second intermediate voltage between the power supply voltage and the ground voltage. In response to a first control signal, the first intermediate voltage is supplied to an output node and the second intermediate voltage stops. A connection control circuit connects the first output node and a second output node when the second intermediate voltage generating circuit stops its operation.
公开/授权文献
- US20130051172A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2013-02-28
信息查询
