发明授权
- 专利标题: Indium oxide-cerium oxide based sputtering target, transparent electroconductive film, and process for producing a transparent electroconductive film
- 专利标题(中): 氧化铟 - 氧化铈基溅射靶,透明导电膜,以及制造透明导电膜的方法
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申请号: US10594756申请日: 2005-02-21
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公开(公告)号: US08529739B2公开(公告)日: 2013-09-10
- 发明人: Kazuyoshi Inoue , Masato Matsubara , Shigekazu Tomai
- 申请人: Kazuyoshi Inoue , Masato Matsubara , Shigekazu Tomai
- 申请人地址: JP Tokyo
- 专利权人: Idemitsu Kosan Co., Ltd
- 当前专利权人: Idemitsu Kosan Co., Ltd
- 当前专利权人地址: JP Tokyo
- 代理机构: Millen, White, Zelano & Branigan, P.C.
- 优先权: JP2004-105581 20040331
- 国际申请: PCT/JP2005/002705 WO 20050221
- 国际公布: WO2005/098080 WO 20051020
- 主分类号: C25B9/00
- IPC分类号: C25B9/00 ; C25B11/00 ; C25B13/00 ; C23C14/00 ; B32B15/00 ; B32B17/06 ; B32B9/00 ; B32B15/04 ; B32B19/00
摘要:
A transparent conductive film for constructing a transparent electrode that is free from the generation of residue, etc. by etching with a weak acid (for example, organic acid). Further, there is provided a sputtering target for producing the transparent conductive film. In particular, there is provided a sputtering target composed of indium oxide and cerium oxide, characterized in that in the observation of crystal peaks by X-ray diffractometry, the presence of peaks ascribed to indium oxide and cerium oxide is observed, and that in the EPMA measurement, the diameter of cerium oxide particles dispersed in indium oxide is measured as being ≦5 μm. A transparent conductive film is formed by a sputtering technique with the use of this sputtering target. This transparent conductive film is substantially free from the generation of residue, etc. by etching with a weak acid (for example, organic acid).
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