发明授权
- 专利标题： Method for manufacturing semiconductor device and apparatus for manufacturing semiconductor device
- 专利标题（中）： 半导体装置的制造方法以及半导体装置的制造装置
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申请号： US13521391申请日： 2011-05-06
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公开(公告)号： US08530357B2公开(公告)日： 2013-09-10
- 发明人: Fumiko Iwao
- 申请人： Fumiko Iwao
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2010-106996 20100507
- 国际申请： PCT/JP2011/002547 WO 20110506
- 国际公布： WO2011/138871 WO 20111110
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; H01L21/311 ; H01L21/31 ; H01L21/469 ; G03C1/00 ; G03F7/00
摘要：
A method of manufacturing a semiconductor device, which includes forming a resist layer on a substrate, performing an exposure and development process on the resist layer to form a resist pattern, performing a slimming process to slim the resist pattern, forming a mask material layer on side walls of the slimmed resist pattern, and removing the slimmed resist pattern. The slimming process further includes coating an extensive agent on the substrate, expanding the expansive agent, and removing the expanded expansive agent.
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