Invention Grant
- Patent Title: Vertical cavity surface emitting laser and manufacturing method thereof
- Patent Title (中): 垂直腔面发射激光器及其制造方法
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Application No.: US13231904Application Date: 2011-09-13
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Publication No.: US08530358B2Publication Date: 2013-09-10
- Inventor: Po-Han Chen , Cheng-Ju Wu , Jin-Shan Pan
- Applicant: Po-Han Chen , Cheng-Ju Wu , Jin-Shan Pan
- Applicant Address: TW Hsinchu
- Assignee: True Light Corporation
- Current Assignee: True Light Corporation
- Current Assignee Address: TW Hsinchu
- Agency: HDLS IPR Services
- Agent Chun-Ming Shih
- Priority: TW99131016A 20100914
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method.
Public/Granted literature
- US20130064263A1 VERTICAL CAVITY SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-03-14
Information query
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