公开(公告)号：US08653438B2

公开(公告)日：2014-02-18

申请号：US13239353

申请日：2011-09-21

Applicant: Chih-Cheng Chen ,  Jin-Shan Pan

Inventor： Chih-Cheng Chen ,  Jin-Shan Pan

IPC: H01J40/14

CPC classification number: G06F3/03547 ,  G06F3/0421

Abstract: A light source unit is disclosed for arranging on a plane and emitting a light beam oblique to the plane. The light source unit includes an illuminant element and a transparent encapsulator. The illuminant element has an upper surface and a lower surface both parallel to the plane. The transparent encapsulator physically contacts with the illuminant element and at least covers the upper surface of the illuminant element. The transparent encapsulator has an oblique surface above the upper surface and oblique to the upper surface. In addition, an optical inputting module having the light source unit mentioned above is disclosed.

Abstract translation: 公开了一种用于在平面上布置并且发射与该平面相反的光束的光源单元。 光源单元包括光源元件和透明封装器。 光源元件具有平行于平面的上表面和下表面。 透明封装器与光源元件物理接触并且至少覆盖发光元件的上表面。 透明封装体在上表面上方具有倾斜表面并且倾斜于上表面。 此外，公开了具有上述光源单元的光学输入模块。

公开(公告)号：US08530358B2

公开(公告)日：2013-09-10

申请号：US13231904

申请日：2011-09-13

Applicant: Po-Han Chen ,  Cheng-Ju Wu ,  Jin-Shan Pan

Inventor： Po-Han Chen ,  Cheng-Ju Wu ,  Jin-Shan Pan

IPC: H01L21/302

CPC classification number: H01S5/18313 ,  H01S5/18344 ,  H01S5/2063

Abstract: The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method.

Abstract translation: 本发明公开了一种垂直腔面发射激光器的制造方法。 该方法包括以下步骤：提供衬底; 形成包含富铝层的外延层堆叠; 形成包括环形开口的离子掺杂掩模; 通过环形开口在外延层堆叠中掺杂离子，并在富铝层上形成环状离子掺杂区域; 在所述离子掺杂掩模上形成用于覆盖所述离子掺杂掩模的环形开口的蚀刻掩模; 通过蚀刻掩模蚀刻外延层堆叠和用于形成岛平台的离子掺杂掩模; 氧化富铝层以形成环形氧化区。 此外，本发明还公开了通过上述方法制造的垂直腔面发射激光器。

公开(公告)号：US08324722B2

公开(公告)日：2012-12-04

申请号：US12657161

申请日：2010-01-14

Applicant: Cheng Ju Wu ,  Hung-Che Chen ,  I Han Wu ,  Shang-Cheng Liu ,  Jin Shan Pan

Inventor： Cheng Ju Wu ,  Hung-Che Chen ,  I Han Wu ,  Shang-Cheng Liu ,  Jin Shan Pan

IPC: H01L23/12

CPC classification number: H01L33/486 ,  H01L27/156 ,  H01L33/64 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2924/19107 ,  H01S5/02216 ,  H01S5/423 ,  H01L2924/00

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract translation: 用于矩阵排列的高功率和高方向性的半导体发光元件的封装装置包括金属基底，阵列芯片和多个金属线。 金属基底是高度导热的铜或铝，并且电绝缘的第一电极区域和至少一个第二电极区域设置在金属基底上。 阵列芯片设置在第一电极区域上，多个矩阵排列的半导体发光元件和与发光元件相邻的至少一个引线接合焊盘设置在该第一电极区域上。 发光元件是VCSEL元件，HCSEL元件或RCLED元件。 金属线连接在引线接合焊盘和第二电极区之间以传输功率信号。 在底表面和第一电极区域之间设置导电粘合剂以结合并促进两者之间的电连接。

公开(公告)号：US08121167B2

公开(公告)日：2012-02-21

申请号：US12436324

申请日：2009-05-06

Applicant: Jin-Shan Pan ,  Shang-Cheng Liu ,  Cheng-Ju Wu ,  Chang-Cherng Wu

Inventor： Jin-Shan Pan ,  Shang-Cheng Liu ,  Cheng-Ju Wu ,  Chang-Cherng Wu

IPC: H01S5/00

CPC classification number: H01S5/02288 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/4087

Abstract: A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Abstract translation: 一种双波长激光装置，包括盖，头，第一激光芯片和第二激光芯片。 盖包括盖体和埋在盖体上的透镜。 头部与帽盖形成容纳空间。 第一激光芯片布置在容纳空间中并朝向透镜发射第一激光束。 第二激光芯片布置在容纳空间中并朝向透镜发射第二激光束。

公开(公告)号：US20110121323A1

公开(公告)日：2011-05-26

申请号：US12657161

申请日：2010-01-14

Applicant: Cheng Ju Wu ,  Hung-Che Chen ,  I Han Wu ,  Shang-Cheng Liu ,  Jin Shan Pan

Inventor： Cheng Ju Wu ,  Hung-Che Chen ,  I Han Wu ,  Shang-Cheng Liu ,  Jin Shan Pan

IPC: H01L33/00

CPC classification number: H01L33/486 ,  H01L27/156 ,  H01L33/64 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2924/19107 ,  H01S5/02216 ,  H01S5/423 ,  H01L2924/00

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract translation: 用于矩阵排列的高功率和高方向性的半导体发光元件的封装装置包括金属基底，阵列芯片和多个金属线。 金属基底是高度导热的铜或铝，并且电绝缘的第一电极区域和至少一个第二电极区域设置在金属基底上。 阵列芯片设置在第一电极区域上，多个矩阵排列的半导体发光元件和与发光元件相邻的至少一个引线接合焊盘设置在该第一电极区域上。 发光元件是VCSEL元件，HCSEL元件或RCLED元件。 金属线连接在引线接合焊盘和第二电极区之间以传输功率信号。 在底表面和第一电极区域之间设置导电粘合剂以结合并促进两者之间的电连接。

公开(公告)号：US20090279898A1

公开(公告)日：2009-11-12

申请号：US12387797

申请日：2009-05-07

Applicant: Jin-Shan Pan ,  Shang-Cheng Liu ,  Cheng-Ju Wu

Inventor： Jin-Shan Pan ,  Shang-Cheng Liu ,  Cheng-Ju Wu

IPC: H04B10/24

CPC classification number: G02B6/4246 ,  H04B10/40

Abstract: A bi-directional optical device includes: a TO cap; a TO header defining a receiving space together with the TO cap; a laser chip provided on the TO header and in the receiving space; and a light-receiving chip provided on the TO header and in the receiving space. The TO cap has a cap body and a lens embeddedly mounted on the cap body. The laser chip emits a first laser beam toward the lens. The light-receiving chip faces the lens and receives a second laser beam transmitted through the lens. The laser chip and the light-receiving chip are packaged together within the receiving space defined by the TO cap and the TO header, so as to effectuate a bi-directional optical device for emitting and receiving light of different wavelengths.

Abstract translation: 双向光学装置包括：TO盖; TO头与TO帽一起定义接收空间; 设置在TO头部和接收空间中的激光芯片; 以及设置在TO头部和接收空间中的光接收芯片。 TO盖具有盖体和嵌入式安装在盖体上的透镜。 激光芯片朝向透镜发射第一激光束。 光接收芯片面向透镜并接收透过透镜的第二激光束。 激光芯片和光接收芯片在由TO盖和TO头限定的接收空间内封装在一起，以实现用于发射和接收不同波长的光的双向光学装置。

公开(公告)号：US20090279578A1

公开(公告)日：2009-11-12

申请号：US12436324

申请日：2009-05-06

Applicant: Jin-Shan PAN ,  Shang-Cheng LIU ,  Cheng-Ju WU ,  Chang-Cherng WU

Inventor： Jin-Shan PAN ,  Shang-Cheng LIU ,  Cheng-Ju WU ,  Chang-Cherng WU

IPC: H01S5/40

CPC classification number: H01S5/02288 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/4087

Abstract: A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens.

Abstract translation: 一种双波长激光装置，包括盖，头，第一激光芯片和第二激光芯片。 盖包括盖体和埋在盖体上的透镜。 头部与帽盖形成容纳空间。 第一激光芯片布置在容纳空间中并朝向透镜发射第一激光束。 第二激光芯片布置在容纳空间中并朝向透镜发射第二激光束。

公开(公告)号：US20060126696A1

公开(公告)日：2006-06-15

申请号：US11302280

申请日：2005-12-14

Applicant: Borlin Lee ,  Chun-Han Wu ,  Jin-Shan Pan ,  Hung-Ching Lai

Inventor： Borlin Lee ,  Chun-Han Wu ,  Jin-Shan Pan ,  Hung-Ching Lai

IPC: H01S5/00

CPC classification number: H01S5/18311 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06226 ,  H01S2301/176

Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract translation: 一种氧化物半导体激光器的制造方法使用双平台来同步地在半导体材料上产生发光有源区域和引线键合区域，并且使用金属保护材料，导电金属材料和介电材料以及 蚀刻工艺，氧化物限制技术和电镀技术来生产双平台，氧化物层，电介质层，保护层和金属层。 发光有源面积平台和引线键合区域平台是独立的，并且在半导体结构上制造引线接合区域平台，使得离子注入工艺可以调节电容并提供更高的引线键合强度。 由于电层被填充在双平台的外侧，所以连接的金属电容降低，平坦化有利于金属层的制造。

公开(公告)号：US20060126691A1

公开(公告)日：2006-06-15

申请号：US11302336

申请日：2005-12-14

Applicant: Borlin Lee ,  Chun-Han Wu ,  Jin-Shan Pan ,  Hung-Ching Lai

Inventor： Borlin Lee ,  Chun-Han Wu ,  Jin-Shan Pan ,  Hung-Ching Lai

IPC: H01S5/00

CPC classification number: H01S5/0261 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/2214 ,  H01S2301/176

Abstract: A dual platform semiconductor laser device includes a laser chip layer, two independent platforms formed on the laser chip layer and defining a light emitting active area platform and a wire bonding platform, a planarized dielectric layer filled between the independent platforms, a protective layer disposed at the dielectric layer and including a contact area hole corresponding to the first independent platform, coated onto the metal layer at the protective layer and coupled to the first independent platform, and extended to the second independent platform to form a pad for wire bonding the first independent platform. The independent platforms define the second independent platform for wire bonding, and its capacitance is modulated to provide a stronger wire bonding strength, and the dielectric layer filled at the external sides of the two platforms lowers the wire connected metal capacitance and obtain a planarized surface for producing the metal layer easily.

Abstract translation: 双平台半导体激光器件包括激光芯片层，形成在激光芯片层上的两个独立平台，并且限定发光有源区域平台和引线键合平台，填充在独立平台之间的平坦化介电层，设置在 介电层并且包括与第一独立平台相对应的接触面积孔，在保护层处涂覆到金属层上并且耦合到第一独立平台，并且延伸到第二独立平台以形成用于引线键合的第一独立 平台。 独立平台定义了用于引线键合的第二独立平台，并且其电容被调制以提供更强的引线键合强度，并且在两个平台的外侧填充的电介质层降低了导线连接的金属电容并获得平面化表面 生产金属层容易。

公开(公告)号：US08658961B2

公开(公告)日：2014-02-25

申请号：US13198902

申请日：2011-08-05

Applicant: Chih-Cheng Chen ,  Jin-Shan Pan

Inventor： Chih-Cheng Chen ,  Jin-Shan Pan

IPC: H01J3/14

CPC classification number: H01J3/14 ,  H01L31/167 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A submount is used for disposing an illuminant element or a light-receiving element having an optical axis. The submount is disposed at a plane and has a main body. The main body includes a first surface and a second surface. The first surface is approximately parallel to the plane and far away from the plane. The second surface is approximately parallel to the plane and adjacent to the plane. A disposing part of the first surface is tilted with respect to the second surface at a predetermined angle. The illuminant element or the light-receiving element is disposed on the disposing part. The optical axis of the illuminant element or the light-receiving element is tiled with respect to a normal of the second surface at the predetermined angle.

Abstract translation: 基座用于设置具有光轴的光源元件或光接收元件。 底座设置在平面上并具有主体。 主体包括第一表面和第二表面。 第一表面大致平行于平面并远离平面。 第二表面大致平行于平面并与平面相邻。 第一表面的设置部分以预定角度相对于第二表面倾斜。 照明元件或光接收元件设置在配置部上。 光源元件或光接收元件的光轴相对于第二表面的法线以预定角度被平铺。