Invention Grant
- Patent Title: System for transient voltage suppressors
- Patent Title (中): 瞬态电压抑制器系统
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Application No.: US13281638Application Date: 2011-10-26
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Publication No.: US08530902B2Publication Date: 2013-09-10
- Inventor: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
- Applicant: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Penny A. Clarke
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
Public/Granted literature
- US20130105816A1 METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS Public/Granted day:2013-05-02
Information query
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