公开(公告)号：US08530902B2

公开(公告)日：2013-09-10

申请号：US13281638

申请日：2011-10-26

Applicant: Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

Inventor： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC: H01L29/15

CPC classification number: H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

Abstract translation: 提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。 TVS组件包括台面结构中的半导体管芯，其包括具有第一极性的导电率的第一宽带隙半导体的第一层，具有第二极导电率的第一或第二宽带隙半导体的第二层 极性与第一层电接触，其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一，第二或第三宽带隙半导体的第三层。 相对于具有第一极性的导电性的层，具有第二极性的导电性的层被轻掺杂。

公开(公告)号：US08121813B2

公开(公告)日：2012-02-21

申请号：US12361469

申请日：2009-01-28

Applicant: Zhiyuan Ren ,  Wayne Charles Hasz ,  Emad Andarawis Andarawis ,  David So Keung Chan ,  David Mulford Shaddock ,  John Harry Down ,  Samhita Dasgupta ,  William Lee Herron ,  Cheryl Lynn Herron, legal representative ,  David Walter Parry ,  David Richard Esler ,  Mahadevan Balasubramaniam

Inventor： Zhiyuan Ren ,  Wayne Charles Hasz ,  Emad Andarawis Andarawis ,  David So Keung Chan ,  David Mulford Shaddock ,  John Harry Down ,  Samhita Dasgupta ,  William Lee Herron ,  David Walter Parry ,  David Richard Esler ,  Mahadevan Balasubramaniam

IPC: G06F11/00

CPC classification number: G01B7/14 ,  F01D21/003

Abstract: A processing system for clearance estimation in a rotating machine includes one or more sensors and one or more digital signal processors for calculating the estimated clearance. The processing system may include techniques for obtaining real-time clearance estimates and techniques for obtaining averaged clearance estimates. Aspects of the processing system may also include a method of switching between real-time clearance estimates and averaged clearance estimates depending on the operating conditions of the rotating machine. Other aspects of the processing system include the use of two digital signal processors: a first digital signal processor configured to receive signals from a clearance sensor and perform a first set of high speed processing tasks, and a second digital signal processor configured to receive signals from the first digital signal processor and perform a second set of lower speed processing tasks.

Abstract translation: 用于旋转机器中的间隙估计的处理系统包括一个或多个传感器和用于计算估计间隙的一个或多个数字信号处理器。 处理系统可以包括用于获得实时清除率估计的技术和用于获得平均清除率估计的技术。 处理系统的方面还可以包括根据旋转机器的操作条件在实时间隙估计和平均间隙估计之间切换的方法。 处理系统的其他方面包括使用两个数字信号处理器：第一数字信号处理器，被配置为从间隙传感器接收信号并执行第一组高速处理任务;以及第二数字信号处理器，被配置为从 第一数字信号处理器并执行第二组较低速处理任务。

公开(公告)号：US07333913B2

公开(公告)日：2008-02-19

申请号：US11167434

申请日：2005-06-27

Applicant: Emad Andarawis Andarawis ,  Mahadevan Balasubramaniam ,  Todd Alan Anderson ,  Samhita Dasgupta ,  David Mulford Shaddock ,  Shobhana Mani ,  Jie Jiang

Inventor： Emad Andarawis Andarawis ,  Mahadevan Balasubramaniam ,  Todd Alan Anderson ,  Samhita Dasgupta ,  David Mulford Shaddock ,  Shobhana Mani ,  Jie Jiang

IPC: G01B5/14

CPC classification number: G01B7/144

Abstract: A clearance measurement system is provided. The clearance measurement system includes a reference geometry disposed on a first object having an otherwise continuous surface geometry and a sensor disposed on a second object, wherein the sensor is configured to generate a first signal representative of a first sensed parameter from the first object and a second signal representative of a second sensed parameter from the reference geometry. The clearance measurement system also includes a processing unit configured to process the first and second signals to estimate a clearance between the first and second objects based upon a measurement difference between the first and second sensed parameters.

Abstract translation: 提供了间隙测量系统。 间隙测量系统包括设置在具有另外连续的表面几何形状的第一物体上的参考几何形状和设置在第二物体上的传感器，其中传感器被配置为产生表示来自第一物体的第一感测参数的第一信号，以及 第二信号表示来自参考几何的第二感测参数。 间隙测量系统还包括处理单元，其被配置为基于第一和第二感测参数之间的测量差异来处理第一和第二信号以估计第一和第二对象之间的间隙。

公开(公告)号：US09113583B2

公开(公告)日：2015-08-18

申请号：US13563132

申请日：2012-07-31

Applicant: David Mulford Shaddock ,  Emad Andarawis Andarawis

Inventor： David Mulford Shaddock ,  Emad Andarawis Andarawis

IPC: H05K1/00 ,  H05K3/28

CPC classification number: H05K3/282 ,  H01L2224/16225 ,  H05K2203/1194

Abstract: An apparatus includes a substrate and a plurality of conductive traces formed on the substrate. The conductive traces are doped with a concentration of an aluminum material forming a protective layer as a portion of the plurality of conductive traces to inhibit oxidation. A set of first metal contact pads are formed in contact with the plurality of conductive traces. The substrate, the plurality of conductive traces and the set of first metal contact pads define an electronic circuit board configured to operate at a temperature greater than 200 degrees Celsius. A high operating temperature electronic device is configured in electrical communication with the conductive traces defining an assembly configured to operate at a temperature greater than 200 degrees Celsius.

Abstract translation: 一种装置包括基板和形成在基板上的多个导电迹线。 导电迹线掺杂有形成保护层的铝材料的浓度作为多个导电迹线的一部分以抑制氧化。 形成与多个导电迹线接触的一组第一金属接触焊盘。 衬底，多个导电迹线和第一金属接触焊盘组限定了配置成在大于200摄氏度的温度下操作的电子电路板。 高工作温度电子器件被配置为与导电迹线电连通，导电迹线限定被配置为在大于200摄氏度的温度下操作的组件。

公开(公告)号：US20130105816A1

公开(公告)日：2013-05-02

申请号：US13281638

申请日：2011-10-26

Applicant: Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

Inventor： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC: H01L29/16 ,  H01L21/56 ,  H01L29/12

CPC classification number: H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

公开(公告)号：US20100328896A1

公开(公告)日：2010-12-30

申请号：US12826337

申请日：2010-06-29

Applicant: David Mulford Shaddock ,  Deng Tao ,  Hendrik Pieter Jacobus De Bock ,  Dalong Zhong ,  Christopher Michael Eastman ,  Kevin Matthew Durocher ,  Stanton Earl Weaver, JR.

Inventor： David Mulford Shaddock ,  Deng Tao ,  Hendrik Pieter Jacobus De Bock ,  Dalong Zhong ,  Christopher Michael Eastman ,  Kevin Matthew Durocher ,  Stanton Earl Weaver, JR.

IPC: H05K7/20 ,  C23C14/34 ,  C25D7/12 ,  F28F7/00 ,  B23P17/04

CPC classification number: H01L23/433 ,  B82Y30/00 ,  B82Y40/00 ,  C25D5/022 ,  C25D7/12 ,  F28F2013/006 ,  F28F2255/00 ,  H01L2924/0002 ,  Y10T29/49 ,  Y10T428/30 ,  H01L2924/00

Abstract: An article and method of forming the article is disclosed. The article includes a heat source, a heat-sink, and a thermal interface element having a plurality of freestanding nanosprings, a top layer, and a bottom layer. The nanosprings, top layer, and the bottom layers of the article include at least one inorganic material. The article can be prepared using a number of methods including the methods such as GLAD and electrochemical deposition.

Abstract translation: 公开了一种形成物品的制品和方法。 该制品包括热源，散热器和具有多个独立纳米脉冲，顶层和底层的热界面元件。 制品的纳米螺旋，顶层和底层包括至少一种无机材料。 该制品可以使用许多方法制备，包括诸如GLAD和电化学沉积的方法。

公开(公告)号：US20100077830A1

公开(公告)日：2010-04-01

申请号：US12241499

申请日：2008-09-30

Applicant: Emad Andarawis Andarawis ,  Wayne Charles Hasz ,  David So Keung Chan ,  David Mulford Shaddock ,  John Harry Down ,  Samhita Dasgupta ,  David Richard Esler ,  Zhiyuan Ren ,  Mahadevan Balasubramaniam ,  Ibrahim Issoufou Kouada

Inventor： Emad Andarawis Andarawis ,  Wayne Charles Hasz ,  David So Keung Chan ,  David Mulford Shaddock ,  John Harry Down ,  Samhita Dasgupta ,  David Richard Esler ,  Zhiyuan Ren ,  Mahadevan Balasubramaniam ,  Ibrahim Issoufou Kouada

IPC: G01B21/16

CPC classification number: G01B21/042

Abstract: Self-calibration of a multiple channel clearance sensor system, which in one embodiment includes at least one sensor for measuring at least one clearance parameter signal between a stationary object and a rotating object of a rotating machine. The sensor output is processed as a clearance parameter by an offset correction section configured to determine an offset error in the clearance parameter signal which is used by a level shifter. The level shifter is also switchably coupled to the clearance parameter signal wherein the output of the level shifter, which may be amplified and digitally converted, is processed by a signal level analyzer to determine a channel gain signal.

Abstract translation: 多通道间隙传感器系统的自校准，其在一个实施例中包括用于测量静止物体和旋转机器的旋转物体之间的至少一个间隙参数信号的至少一个传感器。 传感器输出通过偏移校正部分被处理为间隙参数，偏移校正部分被配置为确定由电平移位器使用的间隙参数信号中的偏移误差。 电平移位器还可切换地耦合到间隙参数信号，其中可以被放大和数字转换的电平移位器的输出由信号电平分析器处理以确定信道增益信号。

公开(公告)号：US20080232745A1

公开(公告)日：2008-09-25

申请号：US11687931

申请日：2007-03-19

Applicant: Aaron Jay Knobloch ,  David Mulford Shaddock ,  David Richard Esler ,  Marco Francesco Aimi ,  Douglas S. Byrd ,  David Robert O'Connor ,  Stacey Joy Kennerly

Inventor： Aaron Jay Knobloch ,  David Mulford Shaddock ,  David Richard Esler ,  Marco Francesco Aimi ,  Douglas S. Byrd ,  David Robert O'Connor ,  Stacey Joy Kennerly

IPC: G02B6/36 ,  B29C65/02 ,  B29C65/08

CPC classification number: G02B6/3624 ,  B23K26/21 ,  B23K2101/04 ,  B23K2101/36 ,  G02B6/3833 ,  Y10T156/10

Abstract: A method for assembling a Fabry-Perot interferometer includes depositing a first metal layer on an end portion of a ferrule, depositing a second metal layer on a back portion of a die, placing the first metal layer and the second metal layer in contact with each other with respective first and second orifices aligned with respect to each other, and bonding the ferrule to the die by thermo compression. The resulting interferometer includes a glass die with a cavity, a silicon diaphragm disposed over the opening of the cavity and bonded to the glass die, a ferrule bonded to the glass die by thermo compression with the first and second orifices being aligned to each other, and an optical fiber inserted through the other end of the ferrule in direct contact to a back portion of the die and aligned with the first orifice.

Abstract translation: 用于组装法布里 - 珀罗干涉仪的方法包括在套圈的端部上沉积第一金属层，在模具的后部上沉积第二金属层，将第一金属层和第二金属层与每个金属层接触 另一个，相应的第一和第二孔相对于彼此对准，并且通过热压接将套圈接合到管芯。 所得到的干涉仪包括具有空腔的玻璃模具，设置在空腔的开口上并结合到玻璃模具的硅膜片，通过第一和第二孔彼此对准的热压而与玻璃模具接合的套圈， 以及插入穿过套管的另一端的光纤直接接触模具的后部并与第一孔对准。

公开(公告)号：US07313965B2

公开(公告)日：2008-01-01

申请号：US11509397

申请日：2006-08-25

Applicant: Vinayak Tilak ,  Jie Jiang ,  David Mulford Shaddock ,  Stacey Joy Kennerly ,  David Richard Esler ,  Aaron Jay Knobloch

Inventor： Vinayak Tilak ,  Jie Jiang ,  David Mulford Shaddock ,  Stacey Joy Kennerly ,  David Richard Esler ,  Aaron Jay Knobloch

IPC: G01L9/00

CPC classification number: G01H9/00 ,  G01L1/044 ,  G01L1/148 ,  G01L1/16 ,  G01L9/0052 ,  G01L9/0073 ,  G01L9/0075 ,  G01L9/008 ,  G01L9/085 ,  G01L19/0681

Abstract: A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.

Abstract translation: 一种包括电介质层的高温压力传感器。 压力传感器还包括能够耐受大于450℃的温度而不进入相变的衬底，沉积在蓝宝石衬底上的至少一种半导体材料和沉积在半导体材料上的二氧化硅层。 压力传感器的一个方面包括第二半导体材料。

公开(公告)号：US06518600B1

公开(公告)日：2003-02-11

申请号：US09714434

申请日：2000-11-17

Applicant: David Mulford Shaddock

Inventor： David Mulford Shaddock

IPC: H01L2100

CPC classification number: H01L33/56 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/00014

Abstract: An encapsulated device comprises a solid state device, a first encapsulating material and a second encapsulating material having a higher thermal conductivity than the first encapsulating material. The solid state device may be an LED. The first encapsulating material located above the LED may be transparent to LED light or radiation, while the second encapsulating material located below the LED may have a high thermal conductivity to decrease the LED operating temperature.

Abstract translation: 封装装置包括固态器件，第一封装材料和具有比第一封装材料更高导热性的第二封装材料。 固态器件可以是LED。 位于LED上方的第一封装材料对于LED光或辐射可能是透明的，而位于LED下方的第二封装材料可具有高热导率以降低LED工作温度。