发明授权
- 专利标题： System for transient voltage suppressors
- 专利标题（中）： 瞬态电压抑制器系统
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申请号： US13281638申请日： 2011-10-26
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公开(公告)号： US08530902B2公开(公告)日： 2013-09-10
- 发明人: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
- 申请人： Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Penny A. Clarke
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
公开/授权文献
- US20130105816A1 METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS 公开/授权日：2013-05-02
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