Invention Grant
- Patent Title: Field emission device and method of manufacturing the same
- Patent Title (中): 场发射装置及其制造方法
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Application No.: US12479361Application Date: 2009-06-05
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Publication No.: US08531096B2Publication Date: 2013-09-10
- Inventor: Yoon-chul Son , Yong-chul Kim , In-taek Han , Ho-suk Kang
- Applicant: Yoon-chul Son , Yong-chul Kim , In-taek Han , Ho-suk Kang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0134971 20081226
- Main IPC: H01J1/02
- IPC: H01J1/02
Abstract:
A field emission device includes; a substrate including at least one groove, at least one metal electrode disposed respectively in the at least one groove, and carbon nanotube (“CNT”) emitters disposed respectively on the at least one metal electrode, wherein each of the CNT emitters includes a composite of Sn and CNTs.
Public/Granted literature
- US20100164356A1 FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-07-01
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