Invention Grant
US08535442B2 Crystal growth system and method for lead-contained compositions using batch auto-feeding
有权
使用分批自动喂养的含铅组合物的晶体生长系统和方法
- Patent Title: Crystal growth system and method for lead-contained compositions using batch auto-feeding
- Patent Title (中): 使用分批自动喂养的含铅组合物的晶体生长系统和方法
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Application No.: US12373080Application Date: 2007-07-12
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Publication No.: US08535442B2Publication Date: 2013-09-17
- Inventor: Pengdi Han , Jian Tian
- Applicant: Pengdi Han , Jian Tian
- Applicant Address: US IL Bolingbrook
- Assignee: H.C. Materials Corporation
- Current Assignee: H.C. Materials Corporation
- Current Assignee Address: US IL Bolingbrook
- Agency: Lackenbach Siegel, LLP
- Agent Andrew F. Young, Esq.
- International Application: PCT/US2007/073412 WO 20070712
- International Announcement: WO2008/063715 WO 20080529
- Main IPC: C30B35/00
- IPC: C30B35/00 ; C30B13/28 ; C30B11/00 ; C30B13/00 ; C30B21/04 ; C30B28/08

Abstract:
This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
Public/Granted literature
- US20090241829A1 CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS USING BATCH AUTO-FEEDING Public/Granted day:2009-10-01
Information query
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