发明授权
US08535442B2 Crystal growth system and method for lead-contained compositions using batch auto-feeding
有权
使用分批自动喂养的含铅组合物的晶体生长系统和方法
- 专利标题: Crystal growth system and method for lead-contained compositions using batch auto-feeding
- 专利标题(中): 使用分批自动喂养的含铅组合物的晶体生长系统和方法
-
申请号: US12373080申请日: 2007-07-12
-
公开(公告)号: US08535442B2公开(公告)日: 2013-09-17
- 发明人: Pengdi Han , Jian Tian
- 申请人: Pengdi Han , Jian Tian
- 申请人地址: US IL Bolingbrook
- 专利权人: H.C. Materials Corporation
- 当前专利权人: H.C. Materials Corporation
- 当前专利权人地址: US IL Bolingbrook
- 代理机构: Lackenbach Siegel, LLP
- 代理商 Andrew F. Young, Esq.
- 国际申请: PCT/US2007/073412 WO 20070712
- 国际公布: WO2008/063715 WO 20080529
- 主分类号: C30B35/00
- IPC分类号: C30B35/00 ; C30B13/28 ; C30B11/00 ; C30B13/00 ; C30B21/04 ; C30B28/08
摘要:
This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
公开/授权文献
信息查询
IPC分类: