Invention Grant
- Patent Title: Method of manufacturing a semiconductor device and structure
- Patent Title (中): 制造半导体器件和结构的方法
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Application No.: US12951913Application Date: 2010-11-22
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Publication No.: US08536023B2Publication Date: 2013-09-17
- Inventor: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist
- Applicant: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist
- Applicant Address: US CA San Jose
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Tran & Associates
- Main IPC: H01L21/78
- IPC: H01L21/78

Abstract:
A method of manufacturing semiconductor wafers, the method including: providing a donor wafer including a semiconductor substrate; performing a lithography step and processing the donor wafer; and performing at least two subsequent steps of layer transfer out of the donor wafer, each layer transfer step producing a transferred layer, where each of the transferred layers had been affected by the lithography step, and where each of the transferred layer includes a plurality of transistors with side gates, and where the layer transfer includes an ion-cut, the ion-cut including an ion implant thru the transistors.
Public/Granted literature
- US20120220102A1 SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2012-08-30
Information query
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