Invention Grant
- Patent Title: Manufacturing method for metal gate using ion implantation
- Patent Title (中): 使用离子注入的金属栅的制造方法
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Application No.: US13164781Application Date: 2011-06-21
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Publication No.: US08536038B2Publication Date: 2013-09-17
- Inventor: Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
- Applicant: Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/425
Abstract:
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
Public/Granted literature
- US20120329261A1 MANUFACTURING METHOD FOR METAL GATE Public/Granted day:2012-12-27
Information query
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