发明授权
- 专利标题： Manufacturing method for metal gate using ion implantation
- 专利标题（中）： 使用离子注入的金属栅的制造方法
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申请号： US13164781申请日： 2011-06-21
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公开(公告)号： US08536038B2公开(公告)日： 2013-09-17
- 发明人: Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
- 申请人： Shao-Wei Wang , Yu-Ren Wang , Chien-Liang Lin , Wen-Yi Teng , Tsuo-Wen Lu , Chih-Chung Chen , Ying-Wei Yen , Yu-Min Lin , Chin-Cheng Chien , Jei-Ming Chen , Chun-Wei Hsu , Chia-Lung Chang , Yi-Ching Wu , Shu-Yen Chan
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/425
摘要：
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
公开/授权文献
- US20120329261A1 MANUFACTURING METHOD FOR METAL GATE 公开/授权日：2012-12-27
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