Invention Grant
- Patent Title: Method of forming conductive pattern
- Patent Title (中): 形成导电图案的方法
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Application No.: US13214244Application Date: 2011-08-22
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Publication No.: US08536056B2Publication Date: 2013-09-17
- Inventor: Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
- Applicant: Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
A method of forming conductive pattern is provided. A seeding layer is formed on an underlayer. By using an energy ray, an irradiation treatment is performed on a portion of a surface of the seeding layer. The seeding layer thus includes a plurality of irradiated regions and a plurality of unirradiated regions. A conversion treatment is performed on the irradiated regions of the seeding layer. A selective growth process is performed, so as to form a conductive pattern on each unirradiated region of the seeding layer. The irradiated regions of the seeding layer are removed, so that the conductive patterns are insulated from each other.
Public/Granted literature
- US20130052820A1 METHOD OF FORMING CONDUCTIVE PATTERN Public/Granted day:2013-02-28
Information query
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