Invention Grant
- Patent Title: Plating process and structure
- Patent Title (中): 电镀工艺和结构
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Application No.: US13310448Application Date: 2011-12-02
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Publication No.: US08536573B2Publication Date: 2013-09-17
- Inventor: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
- Applicant: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/48

Abstract:
A system and method for plating a contact connected to a test pad is provided. An embodiment comprises inserting a blocking material into vias between the contact and the test pad. In another embodiment a blocking structure may be inserted between the contact and the test pad. In yet another embodiment a blocking layer may be inserted into a contact stack. Once the blocking material, the blocking structure, or the blocking layer have been formed, the contact may be plated, with the blocking material, the blocking structure, or the blocking layer reducing or preventing degradation of the test pad due to galvanic effects.
Public/Granted literature
- US20130140563A1 Plating Process and Structure Public/Granted day:2013-06-06
Information query
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