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公开(公告)号:US08664760B2
公开(公告)日:2014-03-04
申请号:US13343582
申请日:2012-01-04
Applicant: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hao Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
Inventor: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hao Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
CPC classification number: H01L24/11 , H01L23/147 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/04 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05073 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10145 , H01L2224/10156 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13017 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/13578 , H01L2224/13686 , H01L2224/16058 , H01L2224/16145 , H01L2224/81193 , H01L2224/81815 , H01L2924/01322 , H01L2924/01327 , H01L2924/3651 , H01L2924/3841 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2924/049 , H01L2924/053 , H01L2924/00
Abstract: A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.
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公开(公告)号:US08759118B2
公开(公告)日:2014-06-24
申请号:US13297845
申请日:2011-11-16
Applicant: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
Inventor: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
CPC classification number: H01L22/32
Abstract: A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.
Abstract translation: 提供了一种用于电镀触点的系统和方法。 一个实施例包括在触点和测试垫上形成保护层,然后在触头上选择性地去除保护层,而不需要在测试垫上移除保护层。 在保护层仍在测试焊盘上的情况下,可以将导电层电镀到触点上,而不将其覆盖在测试焊盘上。 接触电镀后,触点上的保护层可以被去除。
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公开(公告)号:US20130233601A1
公开(公告)日:2013-09-12
申请号:US13412958
申请日:2012-03-06
Applicant: Chin-Fu KAO , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
Inventor: Chin-Fu KAO , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
CPC classification number: H01L24/14 , H01L22/32 , H01L23/3192 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05647 , H01L2224/05655 , H01L2224/1146 , H01L2224/11849 , H01L2224/131 , H01L2224/13147 , H01L2224/1403 , H01L2224/141 , H01L2224/14515 , H01L2224/81191 , H01L2224/81192 , H01L2924/00012 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/014
Abstract: A surface metal wiring structure for a substrate includes one or more functional μbumps formed of a first metal and an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional μbumps. The surface metal wiring structure also includes a plurality of sacrificial μbumps formed of the first metal that are electrically connected to the electrical test pads, where the sacrificial μbumps are positioned closer to the electrical test pad than the one or more functional μbumps.
Abstract translation: 用于基板的表面金属布线结构包括由第一金属形成的一个或多个功能性微片和由用于接收电测试探针的第二金属形成的电测试焊盘,并电连接到所述一个或多个功能性微波。 表面金属布线结构还包括多个由第一金属形成的牺牲片,其电连接到电测试焊盘,其中牺牲微片比一个或多个功能性微片更靠近电测试垫定位。
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公开(公告)号:US20130119382A1
公开(公告)日:2013-05-16
申请号:US13297845
申请日:2011-11-16
Applicant: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
Inventor: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
IPC: H01L23/544 , H01L21/28
CPC classification number: H01L22/32
Abstract: A system and method for plating a contact is provided. An embodiment comprises forming protective layers over a contact and a test pad, and then selectively removing the protective layer over the contact without removing the protective layer over the test pad. With the protective layer still on the test pad, a conductive layer may be plated onto the contact without plating it onto the test pad. After the contact has been plated, the protective layer over the contact may be removed.
Abstract translation: 提供了一种用于电镀触点的系统和方法。 一个实施例包括在触点和测试垫上形成保护层,然后在触头上选择性地去除保护层,而不需要在测试垫上移除保护层。 在保护层仍在测试焊盘上的情况下,可以将导电层电镀到触点上,而不将其覆盖在测试焊盘上。 接触电镀后,触点上的保护层可以被去除。
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公开(公告)号:US20120306073A1
公开(公告)日:2012-12-06
申请号:US13343582
申请日:2012-01-04
Applicant: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hoa Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
Inventor: Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hoa Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
IPC: H01L23/485 , H01L21/768
CPC classification number: H01L24/11 , H01L23/147 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/04 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05073 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10145 , H01L2224/10156 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13017 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/13578 , H01L2224/13686 , H01L2224/16058 , H01L2224/16145 , H01L2224/81193 , H01L2224/81815 , H01L2924/01322 , H01L2924/01327 , H01L2924/3651 , H01L2924/3841 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2924/049 , H01L2924/053 , H01L2924/00
Abstract: A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.
Abstract translation: 一种器件包括具有顶表面的顶部电介质层。 金属柱在顶部介电层的顶表面上具有一部分。 在金属柱的侧壁上形成非润湿层,其中非润湿层不能熔化到熔融焊料上。 焊接区域设置在金属柱上并电耦合到金属柱。
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公开(公告)号:US08953336B2
公开(公告)日:2015-02-10
申请号:US13412958
申请日:2012-03-06
Applicant: Chin-Fu Kao , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
Inventor: Chin-Fu Kao , Wen-Chih Chiou , Jing-Cheng Lin , Cheng-Lin Huang , Po-Hao Tsai
IPC: H05K7/10
CPC classification number: H01L24/14 , H01L22/32 , H01L23/3192 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05647 , H01L2224/05655 , H01L2224/1146 , H01L2224/11849 , H01L2224/131 , H01L2224/13147 , H01L2224/1403 , H01L2224/141 , H01L2224/14515 , H01L2224/81191 , H01L2224/81192 , H01L2924/00012 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/014
Abstract: A surface metal wiring structure for a substrate includes one or more functional μbumps formed of a first metal and an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional μbumps. The surface metal wiring structure also includes a plurality of sacrificial μbumps formed of the first metal that are electrically connected to the electrical test pads, where the sacrificial μbumps are positioned closer to the electrical test pad than the one or more functional μbumps.
Abstract translation: 用于基板的表面金属布线结构包括由第一金属形成的一个或多个功能性μ凸块和由用于接收电测试探针并电连接到所述一个或多个功能性μ凸起的第二金属形成的电测试垫。 表面金属布线结构还包括由第一金属形成的多个牺牲μ凸块,其电连接到电测试焊盘,其中牺牲μ凸块位于比一个或多个功能性μ凸块更靠近电测试垫的位置。
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公开(公告)号:US08536573B2
公开(公告)日:2013-09-17
申请号:US13310448
申请日:2011-12-02
Applicant: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
Inventor: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
CPC classification number: H01L22/32 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05027 , H01L2224/05567 , H01L2224/05568 , H01L2224/05572 , H01L2224/05611 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05684 , H01L2224/05686 , H01L2224/11464 , H01L2224/11825 , H01L2224/13006 , H01L2224/13082 , H01L2224/13083 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2924/00014 , H01L2924/01079 , H01L2924/04941 , H01L2224/05552
Abstract: A system and method for plating a contact connected to a test pad is provided. An embodiment comprises inserting a blocking material into vias between the contact and the test pad. In another embodiment a blocking structure may be inserted between the contact and the test pad. In yet another embodiment a blocking layer may be inserted into a contact stack. Once the blocking material, the blocking structure, or the blocking layer have been formed, the contact may be plated, with the blocking material, the blocking structure, or the blocking layer reducing or preventing degradation of the test pad due to galvanic effects.
Abstract translation: 提供了一种用于电镀连接到测试垫的触点的系统和方法。 一个实施例包括将阻塞材料插入到接触件和测试垫之间的通孔中。 在另一个实施例中,阻挡结构可以插入在接触件和测试垫之间。 在另一个实施例中,阻挡层可以插入到触点叠层中。 一旦已经形成了阻挡材料,阻挡结构或阻挡层,则可以用阻挡材料,阻挡结构或阻挡层电镀接触,从而降低或防止由于电偶效应导致的测试焊盘的劣化。
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公开(公告)号:US20130140563A1
公开(公告)日:2013-06-06
申请号:US13310448
申请日:2011-12-02
Applicant: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
Inventor: Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
IPC: H01L23/522
CPC classification number: H01L22/32 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05027 , H01L2224/05567 , H01L2224/05568 , H01L2224/05572 , H01L2224/05611 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05684 , H01L2224/05686 , H01L2224/11464 , H01L2224/11825 , H01L2224/13006 , H01L2224/13082 , H01L2224/13083 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2924/00014 , H01L2924/01079 , H01L2924/04941 , H01L2224/05552
Abstract: A system and method for plating a contact connected to a test pad is provided. An embodiment comprises inserting a blocking material into vias between the contact and the test pad. In another embodiment a blocking structure may be inserted between the contact and the test pad. In yet another embodiment a blocking layer may be inserted into a contact stack. Once the blocking material, the blocking structure, or the blocking layer have been formed, the contact may be plated, with the blocking material, the blocking structure, or the blocking layer reducing or preventing degradation of the test pad due to galvanic effects.
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公开(公告)号:US09418876B2
公开(公告)日:2016-08-16
申请号:US13224575
申请日:2011-09-02
Applicant: Jing-Cheng Lin , Weng-Jin Wu , Shih Ting Lin , Cheng-Lin Huang , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
Inventor: Jing-Cheng Lin , Weng-Jin Wu , Shih Ting Lin , Cheng-Lin Huang , Szu Wei Lu , Shin-Puu Jeng , Chen-Hua Yu
IPC: H01L21/00 , H01L21/56 , H01L21/683 , H01L25/065 , H01L23/00
CPC classification number: H01L21/78 , H01L21/561 , H01L21/563 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L24/16 , H01L25/0652 , H01L2221/68327 , H01L2224/16235 , H01L2224/73204 , H01L2224/81005 , H01L2224/81193 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2224/81
Abstract: A method of fabricating a three-dimensional integrated circuit comprises attaching a wafer to a carrier, mounting a plurality of semiconductor dies on top of the wafer to form a wafer stack. The method further comprises forming a molding compound layer on top of the wafer, attaching the wafer stack to a tape frame and dicing the wafer stack to separate the wafer stack into a plurality of individual packages.
Abstract translation: 制造三维集成电路的方法包括将晶片附着到载体上,将多个半导体管芯安装在晶片的顶部上以形成晶片堆叠。 该方法还包括在晶片的顶部上形成模塑复合层,将晶片堆叠连接到胶带框架上,并切割晶片堆叠以将晶片堆叠分离成多个单独的封装。
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公开(公告)号:US08816498B2
公开(公告)日:2014-08-26
申请号:US13189127
申请日:2011-07-22
Applicant: Cheng-Chieh Hsieh , Cheng-Lin Huang , Po-Hao Tsai , Shang-Yun Hou , Jing-Cheng Lin , Shin-Puu Jeng
Inventor: Cheng-Chieh Hsieh , Cheng-Lin Huang , Po-Hao Tsai , Shang-Yun Hou , Jing-Cheng Lin , Shin-Puu Jeng
IPC: H01L23/485 , H01L21/768
Abstract: A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically connected to another contact through the conductive material.
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