Invention Grant
- Patent Title: Low-voltage bidirectional protection diode
- Patent Title (中): 低压双向保护二极管
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Application No.: US12946992Application Date: 2010-11-16
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Publication No.: US08536682B2Publication Date: 2013-09-17
- Inventor: Benjamin Morillon
- Applicant: Benjamin Morillon
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR09/58323 20091124
- Main IPC: H01L29/861
- IPC: H01L29/861
Abstract:
A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.
Public/Granted literature
- US20110121429A1 LOW-VOLTAGE BIDIRECTIONAL PROTECTION DIODE Public/Granted day:2011-05-26
Information query
IPC分类:
