公开(公告)号：US20110121429A1

公开(公告)日：2011-05-26

申请号：US12946992

申请日：2010-11-16

Applicant: Benjamin Morillon

Inventor： Benjamin Morillon

IPC: H01L29/866 ,  H01L21/329

CPC classification number: H01L29/8618 ,  H01L29/6609 ,  H01L29/66106 ,  H01L29/866

Abstract: A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.

Abstract translation: 垂直双向保护二极管包括在第一导电类型的重掺杂衬底上的第一，第二和第一导电类型的第一，第二和第三区域，这些区域都具有大于2至5的掺杂水平 ×1019原子/ cm3，并且由绝缘沟槽横向界定，这些区域中的每一个具有小于4μm的厚度。

公开(公告)号：US20100187650A1

公开(公告)日：2010-07-29

申请号：US12690717

申请日：2010-01-20

Applicant: Patrick Poveda ,  Benjamin Morillon ,  Erwan Bruno

Inventor： Patrick Poveda ,  Benjamin Morillon ,  Erwan Bruno

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76264 ,  H01L27/0814

Abstract: A structure including at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending on a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component. The trench penetrates, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate.

Abstract translation: 包括形成在半导体堆叠中的至少一个电子部件的结构，包括在第二导电类型的轻掺杂硅衬底上延伸的第一导电类型的重掺杂掩埋硅层和围绕该部件的垂直绝缘沟槽。 沟槽在硅层之下穿入硅衬底，直到深度大于硅衬底中的空间电荷区的厚度。

公开(公告)号：US20120068223A1

公开(公告)日：2012-03-22

申请号：US13105238

申请日：2011-05-11

Applicant: Benjamin Morillon

Inventor： Benjamin Morillon

IPC: H01L23/58 ,  H01L21/20

CPC classification number: H01L29/861 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/66098 ,  H01L2224/06181

Abstract: A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.

Abstract translation: 形成在第一导电类型的半导体衬底中的双向保护部件，包括第一导电类型的第一注入区域，在衬底上的第二导电类型的外延层和第一注入区域，第一导电类型的第二区域 在外延层的外侧，在第一区域的前方，并以与第一区域相同的剂量注入覆盖基板的整个下表面的第一金属化和覆盖第二区域的第二金属化。

公开(公告)号：US08975661B2

公开(公告)日：2015-03-10

申请号：US13210782

申请日：2011-08-16

Applicant: Benjamin Morillon

Inventor： Benjamin Morillon

IPC: H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/32

CPC classification number: H01L29/66098 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/861 ,  Y10S438/983

Abstract: An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.

Abstract translation: 形成在第一导电类型的半导体衬底中的不对称双向保护部件，包括：第一导电类型的第一注入区域; 所述第二导电类型的第一外延层在所述衬底和所述第一注入区上; 所述第二导电类型的第二外延层在所述第一外延层上，所述第二层具有不同于所述第一层的掺杂水平; 所述第一导电类型的第二区域在所述外延层的外表面上与所述第一区域相对; 第一金属化覆盖基板的整个下表面; 以及覆盖所述第二区域的第二金属化。

公开(公告)号：US08604515B2

公开(公告)日：2013-12-10

申请号：US13105238

申请日：2011-05-11

Applicant: Benjamin Morillon

Inventor： Benjamin Morillon

IPC: H01L29/66

CPC classification number: H01L29/861 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/66098 ,  H01L2224/06181

Abstract: A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.

Abstract translation: 形成在第一导电类型的半导体衬底中的双向保护部件，包括第一导电类型的第一注入区域，在衬底上的第二导电类型的外延层和第一注入区域，第一导电类型的第二区域 在外延层的外侧，在第一区域的前方，并以与第一区域相同的剂量注入覆盖基板的整个下表面的第一金属化和覆盖第二区域的第二金属化。

公开(公告)号：US08536682B2

公开(公告)日：2013-09-17

申请号：US12946992

申请日：2010-11-16

Applicant: Benjamin Morillon

Inventor： Benjamin Morillon

IPC: H01L29/861

CPC classification number: H01L29/8618 ,  H01L29/6609 ,  H01L29/66106 ,  H01L29/866

Abstract: A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.

Abstract translation: 垂直双向保护二极管包括在第一导电类型的重掺杂衬底上的第一，第二和第一导电类型的第一，第二和第三区域，这些区域都具有大于2至5的掺杂水平 ×1019个原子/ cm3，并且由绝缘沟槽横向限定，这些区域中的每一个具有小于4μm的厚度。

公开(公告)号：US20120061803A1

公开(公告)日：2012-03-15

申请号：US13210782

申请日：2011-08-16

Applicant: Benjamin Morillon

Inventor： Benjamin Morillon

IPC: H01L29/866 ,  H01L21/329

CPC classification number: H01L29/66098 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/861 ,  Y10S438/983

Abstract: An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first to area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.

Abstract translation: 形成在第一导电类型的半导体衬底中的不对称双向保护部件，包括：第一导电类型的第一注入区域; 所述第二导电类型的第一外延层在所述衬底和所述第一注入区上; 所述第二导电类型的第二外延层在所述第一外延层上，所述第二层具有不同于所述第一层的掺杂水平; 所述第一导电类型的第二区域在所述外延层的外表面上与所述第一区域相对; 第一金属化覆盖基板的整个下表面; 以及覆盖所述第二区域的第二金属化。