- 专利标题： Method for fabricating semiconductor device and semiconductor device
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申请号： US13707359申请日： 2012-12-06
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公开(公告)号： US08536706B2公开(公告)日： 2013-09-17
- 发明人: Yumi Hayashi , Atsuko Sakata , Kei Watanabe , Noriaki Matsunaga , Shinichi Nakao , Makoto Wada , Hiroshi Toyoda
- 申请人： Yumi Hayashi , Atsuko Sakata , Kei Watanabe , Noriaki Matsunaga , Shinichi Nakao , Makoto Wada , Hiroshi Toyoda
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-009356 20090119; JP2009-130831 20090529
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.
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