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US08537612B2 Nonvolatile memory device, system, and programming method 有权
非易失性存储器件,系统和编程方法

Nonvolatile memory device, system, and programming method
Abstract:
A method of programming a nonvolatile memory device comprises selectively programming memory cells from a first state to a second state based on lower bit data, selectively programming the memory cells from the second state to an intermediate state corresponding to the lower bit data, and selectively programming the memory cells from the intermediate state to a third or fourth state based on upper bit data.
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