Invention Grant
US08541816B2 III nitride electronic device and III nitride semiconductor epitaxial substrate
有权
III族氮化物电子器件和III族氮化物半导体外延衬底
- Patent Title: III nitride electronic device and III nitride semiconductor epitaxial substrate
- Patent Title (中): III族氮化物电子器件和III族氮化物半导体外延衬底
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Application No.: US12740770Application Date: 2008-10-28
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Publication No.: US08541816B2Publication Date: 2013-09-24
- Inventor: Shin Hashimoto , Tatsuya Tanabe
- Applicant: Shin Hashimoto , Tatsuya Tanabe
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Satori; Tamatane J. Aga
- Priority: JP2007-286534 20071102
- International Application: PCT/JP2008/069564 WO 20081028
- International Announcement: WO2009/057601 WO 20090507
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
In a group III nitride hetero junction transistor 11a, a second AlY1InY2Ga1-Y1-Y2N layer 15 forms a hetero junction 21 with a first AlX1InX2Ga1-X1-X2N layer 13a. A first electrode 17 forms a Schottky junction with the first AlX1InX2Ga1-X1-X2N layer 13a. The first AlX1InX2Ga1-X1-X2N layer 13a and the second AlY1InY2Ga1-Y1-Y2N layer 15 are provided over a substrate 23. The electrodes 17a, 18a, and 19a include a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration NC13 in the first AlX1InX2Ga1-X1-X2N layer 13a is less than 1×1017 cm−3. The dislocation density D in the second AlY1InY2Ga1-Y1-Y2N layer 15 is 1×108 cm−2. The hetero junction 21 generates a two-dimensional electron gas layer 25. These provide a low-loss gallium nitride based electronic device.
Public/Granted literature
- US20100230687A1 III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE Public/Granted day:2010-09-16
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