A semiconductor device including: a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between; where the at least one conductive layer includes a first conductive layer overlaying a second conductive layer overlying a third conductive layer, and where the second conductive layer having a predetermined second layer current carrying capacity greater than the current carrying capacity of the first conductive layer, and the second conductive layer current carrying capacity being greater than the current carrying capacity of the third conductive layer.