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US08546165B2 Forming light-emitting diodes using seed particles 有权
使用种子颗粒形成发光二极管

Forming light-emitting diodes using seed particles
Abstract:
A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.
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