发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
- 专利标题(中): 半导体发光器件及半导体发光器件的制造方法
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申请号: US13180889申请日: 2011-07-12
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公开(公告)号: US08546178B2公开(公告)日: 2013-10-01
- 发明人: Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
- 申请人: Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-158506 20100713
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.
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