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US08546193B2 Semiconductor device and method of forming penetrable film encapsulant around semiconductor die and interconnect structure 有权
在半导体芯片和互连结构周围形成可穿透膜密封剂的半导体器件和方法

Semiconductor device and method of forming penetrable film encapsulant around semiconductor die and interconnect structure
摘要：
A semiconductor device has a plurality of bumps formed over a carrier. A semiconductor die is mounted to the carrier between the bumps. A penetrable film encapsulant layer having a base layer, first adhesive layer, and second adhesive layer is placed over the semiconductor die and bumps. The penetrable film encapsulant layer is pressed over the semiconductor die and bumps to embed the semiconductor die and bumps within the first and second adhesive layers. The first adhesive layer and second adhesive layer are separated to remove the base layer and first adhesive layer and leave the second adhesive layer around the semiconductor die and bumps. The bumps are exposed from the second adhesive layer. The carrier is removed. An interconnect structure is formed over the semiconductor die and second adhesive layer. A conductive layer is formed over the second adhesive layer electrically connected to the bumps.
摘要（中）：

半导体器件具有形成在载体上的多个凸块。 半导体管芯安装在凸块之间的载体上。 具有基层，第一粘合剂层和第二粘合剂层的可穿透膜包封层被放置在半导体管芯和凸块上。 将可穿透的膜包封层压在半导体管芯和凸起上，以将半导体管芯和凸块嵌入第一和第二粘合剂层内。 分离第一粘合剂层和第二粘合剂层以除去基底层和第一粘合剂层，并且将第二粘合剂层留在半导体管芯和凸起周围。 凸起从第二粘合剂层露出。 载体被移除。 在半导体管芯和第二粘合剂层上形成互连结构。 导电层形成在与凸块电连接的第二粘合剂层上。

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