公开(公告)号：US08501541B2

公开(公告)日：2013-08-06

申请号：US13228226

申请日：2011-09-08

申请人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Linda Pei Ee Chua ,  Byung Tai Do

IPC分类号： H01L21/00

CPC分类号： H01L24/24 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/19 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias.

摘要翻译： 通过将多个半导体管芯设置在载体上并在每个半导体管芯之间产生间隙来制造半导体器件。 第一绝缘材料沉积在间隙中。 去除第一绝缘材料的一部分。 在半导体管芯上形成导电层。 在第一绝缘材料的剩余部分上保形地形成导电衬里，以在间隙内形成导电通孔。 导电通孔可以是锥形或垂直的。 导电通孔电连接到半导体管芯上的接触焊盘。 第二绝缘材料沉积在导电衬里上的间隙中。 导电通孔的一部分可以延伸到第一和第二绝缘材料的外部。 半导体管芯通过间隙被切割。 半导体管芯可以通过导电通孔进行堆叠和互连。

公开(公告)号：US08476772B2

公开(公告)日：2013-07-02

申请号：US12953812

申请日：2010-11-24

申请人： Byung Tai Do ,  Arnel Trasporto ,  Linda Pei Ee Chua ,  Reza A. Pagaila

发明人： Byung Tai Do ,  Arnel Trasporto ,  Linda Pei Ee Chua ,  Reza A. Pagaila

IPC分类号： H01L23/48

CPC分类号： H01L24/14 ,  H01L21/4832 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10175 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/26175 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/8114 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/06558 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/0665 ,  H01L2224/05099 ,  H01L2924/00 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A semiconductor device has a base substrate with recesses formed in a first surface of the base substrate. A first conductive layer is formed over the first surface and into the recesses. A second conductive layer is formed over a second surface of the base substrate. A first semiconductor die is mounted to the base substrate with bumps partially disposed within the recesses over the first conductive layer. A second semiconductor die is mounted to the first semiconductor die. Bond wires are formed between the second semiconductor die and the first conductive layer over the first surface of the base substrate. An encapsulant is deposited over the first and second semiconductor die and base substrate. A portion of the base substrate is removed from the second surface between the second conductive layer down to the recesses to form electrically isolated base leads for the bumps and bond wires.

摘要翻译： 半导体器件具有形成在基底基板的第一表面中的凹部的基底基板。 第一导电层形成在第一表面上并进入凹槽中。 在基底基板的第二表面上形成第二导电层。 第一半导体管芯安装到基底基板上，凸起部分设置在第一导电层的凹槽内。 第二半导体管芯安装到第一半导体管芯。 在第二半导体管芯和第一导电层之间的基底衬底的第一表面上形成接合线。 密封剂沉积在第一和第二半导体管芯和基底衬底上。 基底基板的一部分从第二导电层之间的第二表面移除到凹部，以形成用于凸块和接合线的电隔离的基底引线。

公开(公告)号：US20120126429A1

公开(公告)日：2012-05-24

申请号：US12953812

申请日：2010-11-24

申请人： Byung Tai Do ,  Arnel Trasporto ,  Linda Pei Ee Chua ,  Reza A. Pagaila

发明人： Byung Tai Do ,  Arnel Trasporto ,  Linda Pei Ee Chua ,  Reza A. Pagaila

IPC分类号： H01L25/07 ,  H01L21/98

CPC分类号： H01L24/14 ,  H01L21/4832 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/10175 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/26175 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/8114 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/06558 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/0665 ,  H01L2224/05099 ,  H01L2924/00 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A semiconductor device has a base substrate with recesses formed in a first surface of the base substrate. A first conductive layer is formed over the first surface and into the recesses. A second conductive layer is formed over a second surface of the base substrate. A first semiconductor die is mounted to the base substrate with bumps partially disposed within the recesses over the first conductive layer. A second semiconductor die is mounted to the first semiconductor die. Bond wires are formed between the second semiconductor die and the first conductive layer over the first surface of the base substrate. An encapsulant is deposited over the first and second semiconductor die and base substrate. A portion of the base substrate is removed from the second surface between the second conductive layer down to the recesses to form electrically isolated base leads for the bumps and bond wires.

摘要翻译： 半导体器件具有形成在基底基板的第一表面中的凹部的基底基板。 第一导电层形成在第一表面上并进入凹槽中。 在基底基板的第二表面上形成第二导电层。 第一半导体管芯安装到基底基板上，凸起部分设置在第一导电层的凹槽内。 第二半导体管芯安装到第一半导体管芯。 在第二半导体管芯和第一导电层之间的基底衬底的第一表面上形成接合线。 密封剂沉积在第一和第二半导体管芯和基底衬底上。 基底基板的一部分从第二导电层之间的第二表面移除到凹部，以形成用于凸块和接合线的电隔离的基底引线。

公开(公告)号：US20120112355A1

公开(公告)日：2012-05-10

申请号：US13350299

申请日：2012-01-13

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L23/5386 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/768 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/83 ,  H01L2924/00012

摘要： A semiconductor die has a first semiconductor die mounted to a carrier. A plurality of conductive pillars is formed over the carrier around the first die. An encapsulant is deposited over the first die and conductive pillars. A first stepped interconnect layer is formed over a first surface of the encapsulant and first die. The first stepped interconnect layer has a first opening. A second stepped interconnect layer is formed over the first stepped interconnect layer. The second stepped interconnect layer has a second opening. The carrier is removed. A build-up interconnect structure is formed over a second surface of the encapsulant and first die. A second semiconductor die over the first semiconductor die and partially within the first opening. A third semiconductor die is mounted over the second die and partially within the second opening. A fourth semiconductor die is mounted over the second stepped interconnect layer.

摘要翻译： 半导体管芯具有安装到载体上的第一半导体管芯。 在第一管芯周围的载体上形成多个导电柱。 密封剂沉积在第一管芯和导电柱上。 在密封剂和第一模具的第一表面上形成第一阶梯式互连层。 第一阶梯式互连层具有第一开口。 第二阶梯式互连层形成在第一阶梯式互连层上。 第二阶梯式互连层具有第二开口。 载体被移除。 在密封剂和第一模具的第二表面上形成积聚互连结构。 第一半导体管芯上的第二半导体管芯，并且部分地在第一开口内。 第三半导体管芯安装在第二管芯上并部分地在第二开口内。 第四半导体管芯安装在第二阶梯式互连层上。

公开(公告)号：US20120104590A1

公开(公告)日：2012-05-03

申请号：US12917629

申请日：2010-11-02

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/538 ,  H01L21/822

CPC分类号： H01L23/49811 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3011 ,  H01L2224/19 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a plurality of bumps formed over a carrier. A semiconductor die is mounted to the carrier between the bumps. A penetrable film encapsulant layer having a base layer, first adhesive layer, and second adhesive layer is placed over the semiconductor die and bumps. The penetrable film encapsulant layer is pressed over the semiconductor die and bumps to embed the semiconductor die and bumps within the first and second adhesive layers. The first adhesive layer and second adhesive layer are separated to remove the base layer and first adhesive layer and leave the second adhesive layer around the semiconductor die and bumps. The bumps are exposed from the second adhesive layer. The carrier is removed. An interconnect structure is formed over the semiconductor die and second adhesive layer. A conductive layer is formed over the second adhesive layer electrically connected to the bumps.

摘要翻译： 半导体器件具有形成在载体上的多个凸块。 半导体管芯安装在凸块之间的载体上。 具有基层，第一粘合剂层和第二粘合剂层的可穿透膜包封层被放置在半导体管芯和凸块上。 将可穿透的膜包封层压在半导体管芯和凸起上，以将半导体管芯和凸块嵌入第一和第二粘合剂层内。 分离第一粘合剂层和第二粘合剂层以除去基底层和第一粘合剂层，并且将第二粘合剂层留在半导体管芯和凸起周围。 凸起从第二粘合剂层露出。 载体被移除。 在半导体管芯和第二粘合剂层上形成互连结构。 导电层形成在与凸块电连接的第二粘合剂层上。

公开(公告)号：US08169058B2

公开(公告)日：2012-05-01

申请号：US12545357

申请日：2009-08-21

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/58

CPC分类号： H01L23/49575 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49517 ,  H01L23/49541 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted to a first contact pad on a leadframe or substrate with bumps. A conductive pillar is formed over a second semiconductor die. The second die is mounted over the first die by electrically connecting the conductive pillar to a second contact pad on the substrate with bumps. The second die is larger than the first die. An encapsulant is deposited over the first and second die. Alternatively, the conductive pillars are formed over the substrate around the first die. A heat sink is formed over the second die, and a thermal interface material is formed between the first and second die. An underfill material is deposited under the first semiconductor die. A shielding layer is formed between the first and second die. An interconnect structure can be formed over the second contact pad of the substrate.

摘要翻译： 半导体器件具有第一半导体管芯，其安装到具有凸块的引线框架或衬底上的第一接触焊盘。 在第二半导体管芯上形成导电柱。 通过将导电柱电连接到具有凸起的衬底上的第二接触焊盘上，将第二裸片安装在第一裸片上。 第二个模具大于第一个模具。 密封剂沉积在第一和第二模具上。 或者，导电柱形成在围绕第一管芯的基板上。 在第二管芯上形成散热器，并且在第一和第二管芯之间形成热界面材料。 在第一半导体管芯下沉积底部填充材料。 在第一和第二管芯之间形成屏蔽层。 可以在衬底的第二接触焊盘上形成互连结构。

公开(公告)号：US08164184B2

公开(公告)日：2012-04-24

申请号：US12832821

申请日：2010-07-08

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/34

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 在模具上形成第一绝缘层。 具有成角度侧壁的凹陷区域形成在周边区域中。 第一导电层形成在凹陷区域外部的第一绝缘层的上方，并且进一步进入凹陷区域。 导电柱形成在凹陷区域内的第一导电层的上方。 在第一绝缘层，导电柱和第一导电层上形成第二绝缘层，使得导电柱从第二绝缘层露出。 切割通道部分通过周边区域。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以被设置在具有其它部件的半导体封装中并通过导电柱电互连。

公开(公告)号：US20110042798A1

公开(公告)日：2011-02-24

申请号：US12545357

申请日：2009-08-21

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/498 ,  H01L21/98

CPC分类号： H01L23/49575 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/49517 ,  H01L23/49541 ,  H01L24/48 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted to a first contact pad on a leadframe or substrate with bumps. A conductive pillar is formed over a second semiconductor die. The second die is mounted over the first die by electrically connecting the conductive pillar to a second contact pad on the substrate with bumps. The second die is larger than the first die. An encapsulant is deposited over the first and second die. Alternatively, the conductive pillars are formed over the substrate around the first die. A heat sink is formed over the second die, and a thermal interface material is formed between the first and second die. An underfill material is deposited under the first semiconductor die. A shielding layer is formed between the first and second die. An interconnect structure can be formed over the second contact pad of the substrate.

摘要翻译： 半导体器件具有第一半导体管芯，其安装到具有凸块的引线框架或衬底上的第一接触焊盘。 在第二半导体管芯上形成导电柱。 通过将导电柱电连接到具有凸起的衬底上的第二接触焊盘上，将第二裸片安装在第一裸片上。 第二个模具大于第一个模具。 密封剂沉积在第一和第二模具上。 或者，导电柱形成在围绕第一管芯的基板上。 在第二管芯上形成散热器，并且在第一和第二管芯之间形成热界面材料。 在第一半导体管芯下沉积底部填充材料。 在第一和第二管芯之间形成屏蔽层。 可以在衬底的第二接触焊盘上形成互连结构。

公开(公告)号：US20100213618A1

公开(公告)日：2010-08-26

申请号：US12775338

申请日：2010-05-06

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/538 ,  H01L23/52

CPC分类号： H01L23/481 ,  H01L21/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3157 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/02371 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/82039 ,  H01L2224/9222 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.

摘要翻译： 通过提供具有半导体管芯的第一半导体晶片来制造半导体器件。 在半导体管芯之间形成间隙。 绝缘材料沉积在间隙中。 去除绝缘材料的一部分以形成通过（THV）的第一通孔。 导电衬里共形沉积在第一个THV中。 焊料材料设置在第一THV的导电衬里之上。 具有半导体管芯的第二半导体晶片设置在第一晶片上。 第二THV形成在第二晶片的管芯之间的间隙中。 导电衬里共形沉积在第二个THV中。 焊料材料设置在第二THV之上。 第二个THV与第一个THV对齐。 焊料材料被回流以在间隙内形成导电通孔。 将间隙分开以分离半导体管芯。

公开(公告)号：US07776655B2

公开(公告)日：2010-08-17

申请号：US12331682

申请日：2008-12-10

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 在模具上形成第一绝缘层。 具有成角度侧壁的凹陷区域形成在周边区域中。 第一导电层形成在凹陷区域外部的第一绝缘层的上方，并且进一步进入凹陷区域。 导电柱形成在凹陷区域内的第一导电层的上方。 在第一绝缘层，导电柱和第一导电层上形成第二绝缘层，使得导电柱从第二绝缘层露出。 切割通道部分通过周边区域。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以被设置在具有其它部件的半导体封装中并通过导电柱电互连。