发明授权
US08546214B2 P-type control gate in non-volatile storage and methods for forming same
有权
非易失性存储中的P型控制门及其形成方法
- 专利标题： P-type control gate in non-volatile storage and methods for forming same
- 专利标题（中）： 非易失性存储中的P型控制门及其形成方法
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申请号： US12887328申请日： 2010-09-21
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公开(公告)号： US08546214B2公开(公告)日： 2013-10-01
- 发明人: Takashi Whitney Orimoto , Atsushi Suyama , Ming Tian , Henry Chin , Henry Chien , Vinod Robert Purayath , Dana Lee
- 申请人： Takashi Whitney Orimoto , Atsushi Suyama , Ming Tian , Henry Chin , Henry Chien , Vinod Robert Purayath , Dana Lee
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies Inc.
- 当前专利权人： SanDisk Technologies Inc.
- 当前专利权人地址： US TX Plano
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.
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