发明授权
- 专利标题: Method for manufacturing light-emitting device
- 专利标题(中): 发光装置的制造方法
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申请号: US12166002申请日: 2008-07-01
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公开(公告)号: US08551557B2公开(公告)日: 2013-10-08
- 发明人: Hisao Ikeda , Takahiro Ibe , Yosuke Sato , Kohei Yokoyama
- 申请人: Hisao Ikeda , Takahiro Ibe , Yosuke Sato , Kohei Yokoyama
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2007-179085 20070706
- 主分类号: B05D5/06
- IPC分类号: B05D5/06 ; C23C16/00 ; H01L21/00
摘要:
A method for manufacturing a light-emitting device including a layer containing different evaporation materials, by which a desired layer containing the different evaporation materials is formed easily using a plurality of evaporation materials. A light-emitting device is manufactured in such a manner that a plurality of layers each containing a different evaporation material from each other is stacked over a first substrate; a second substrate which has a first electrode is placed at a position facing the first substrate; the plurality of layers containing evaporation materials is heated to form a layer containing different evaporation materials is formed on the first electrode provided for the second substrate; and a second electrode is formed on the layer containing different evaporation materials.
公开/授权文献
- US20090011677A1 Method for Manufacturing Light-Emitting Device 公开/授权日:2009-01-08
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