发明授权
- 专利标题： Method of bevel trimming three dimensional semiconductor device
- 专利标题（中）： 斜面修边三维半导体器件的方法
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申请号： US13093735申请日： 2011-04-25
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公开(公告)号： US08551881B2公开(公告)日： 2013-10-08
- 发明人: Shing-Yih Shih , Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Shing-Yih Shih , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of bevel trimming a three dimensional (3D) semiconductor device is disclosed, comprising providing a substrate with stack layers thereon and through substrate vias (TSV) therein, wherein an edge of the substrate is curved, performing a bevel trimming step to the curved edge of the substrate for obtaining a planar edge, and thinning the substrate to expose the through substrate vias.
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