发明授权
- 专利标题： Power semiconductor device
- 专利标题（中）： 功率半导体器件
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申请号： US12962079申请日： 2010-12-07
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公开(公告)号： US08552428B2公开(公告)日： 2013-10-08
- 发明人: Shigeto Honda
- 申请人： Shigeto Honda
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-074916 20100329
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L31/0256 ; H01L31/0312 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A power semiconductor device according to the present invention, which has a termination structure in which a field plate is provided on an insulating film filled in a recessed region formed in a semiconductor substrate and includes a plurality of unit cells connected in parallel, includes: a gate wiring region in which gate wiring electrically connected to each gate electrode of the plurality of unit cells is provided; and a gate pad region electrically connected to the gate wiring region, wherein the gate wiring region is disposed on the insulating film filled in a recessed region formed in the semiconductor substrate.
公开/授权文献
- US20110233544A1 POWER SEMICONDUCTOR DEVICE 公开/授权日：2011-09-29
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