发明授权
US08552435B2 Electronic device structure including a buffer layer on a base layer
有权
电子器件结构包括在基底层上的缓冲层
- 专利标题： Electronic device structure including a buffer layer on a base layer
- 专利标题（中）： 电子器件结构包括在基底层上的缓冲层
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申请号： US12840583申请日： 2010-07-21
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公开(公告)号： US08552435B2公开(公告)日： 2013-10-08
- 发明人: Qingchun Zhang , Anant Agarwal
- 申请人： Qingchun Zhang , Anant Agarwal
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Withrow & Terranova, P.L.L.C.
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
Electronic device structures that compensate for non-uniform etching on a semiconductor wafer and methods of fabricating the same are disclosed. In one embodiment, the electronic device includes a number of layers including a semiconductor base layer of a first doping type formed of a desired semiconductor material, a semiconductor buffer layer on the base layer that is also formed of the desired semiconductor material, and one or more contact layers of a second doping type on the buffer layer. The one or more contact layers are etched to form a second contact region of the electronic device. The buffer layer reduces damage to the semiconductor base layer during fabrication of the electronic device. Preferably, a thickness of the semiconductor buffer layer is selected to compensate for over-etching due to non-uniform etching on a semiconductor wafer on which the electronic device is fabricated.