Invention Grant
- Patent Title: Chemical mechanical polishing slurry, its preparation method and use for the same
- Patent Title (中): 化学机械抛光浆料,其制备方法和用途相同
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Application No.: US13456413Application Date: 2012-04-26
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Publication No.: US08557006B2Publication Date: 2013-10-15
- Inventor: Hui-Fang Hou , Wen-Cheng Liu , Yen-Liang Chen , Jui-Ching Chen
- Applicant: Hui-Fang Hou , Wen-Cheng Liu , Yen-Liang Chen , Jui-Ching Chen
- Applicant Address: US IL Aurora
- Assignee: Epoch Material Co., Ltd.
- Current Assignee: Epoch Material Co., Ltd.
- Current Assignee Address: US IL Aurora
- Agent Thomas E Omholt; Steven D Weseman
- Priority: TW95139197A 20061024
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/31053

Abstract:
A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.
Public/Granted literature
- US20120270401A1 CHEMICAL MECHANICAL POLISHING SLURRY, ITS PREPARATION METHOD AND USE FOR THE SAME Public/Granted day:2012-10-25
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