发明授权
US08557647B2 Method for fabricating field effect transistor devices with high-aspect ratio mask
失效
具有高纵横比掩模的场效应晶体管器件的制造方法
- 专利标题： Method for fabricating field effect transistor devices with high-aspect ratio mask
- 专利标题（中）： 具有高纵横比掩模的场效应晶体管器件的制造方法
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申请号： US13229154申请日： 2011-09-09
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公开(公告)号： US08557647B2公开(公告)日： 2013-10-15
- 发明人: Brent A. Anderson , Edward J. Nowak , Jed H. Rankin
- 申请人： Brent A. Anderson , Edward J. Nowak , Jed H. Rankin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Richard Kotulak
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/8232 ; H01L21/336 ; H01L21/8234 ; H01L21/00
摘要：
A method for forming feature on a substrate includes forming at least one layer of a feature material on a substrate, patterning a photolithographic resist material on the at least one layer of the feature material, removing portions of the feature material to define a feature, depositing a masking material layer over the resist material and exposed regions of the substrate, modifying a portion of the substrate, and removing the masking material layer and the resist material.
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