发明授权
US08560902B1 Writing scheme for phase change material-content addressable memory
有权
相变材料内容可寻址存储器的写入方案
- 专利标题： Writing scheme for phase change material-content addressable memory
- 专利标题（中）： 相变材料内容可寻址存储器的写入方案
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申请号： US13587146申请日： 2012-08-16
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公开(公告)号： US08560902B1公开(公告)日： 2013-10-15
- 发明人: Chung H. Lam , Jing Li , Robert K. Montoye
- 申请人： Chung H. Lam , Jing Li , Robert K. Montoye
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Ido Tuchman; Vazken Alexanian
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; G01R31/28
摘要：
A method for programming a Phase Change Material-Content Addressable Memory (PCM-CAM). The method includes receiving a word to be written in a PCM-CAM. The word includes low bits represented by a low resistance state in the PCM-CAM and high bits represented by a high resistance state in the PCM-CAM. The method further includes repeatedly writing the low bits in memory cells of the PCM-CAM until the resistance of the memory cells are below a threshold value, and writing the high bits in memory cells of the PCM-CAM only once.
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