Invention Grant
- Patent Title: Method and apparatus for atomic layer deposition
- Patent Title (中): 用于原子层沉积的方法和装置
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Application No.: US13098991Application Date: 2011-05-02
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Publication No.: US08562743B2Publication Date: 2013-10-22
- Inventor: Eric J. Strang
- Applicant: Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306
Abstract:
A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.
Public/Granted literature
- US20110203523A1 METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION Public/Granted day:2011-08-25
Information query
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