发明授权
US08563446B2 Technique to create a buried plate in embedded dynamic random access memory device
有权
在嵌入式动态随机存取存储器件中创建掩埋板的技术
- 专利标题： Technique to create a buried plate in embedded dynamic random access memory device
- 专利标题（中）： 在嵌入式动态随机存取存储器件中创建掩埋板的技术
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申请号： US13474790申请日： 2012-05-18
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公开(公告)号： US08563446B2公开(公告)日： 2013-10-22
- 发明人: Ashima B. Chakravarti , Jacob B. Dadson , Paul J. Higgins , Babar A. Khan , John J. Moore , Christopher C. Parks , Rohit S. Takalkar
- 申请人： Ashima B. Chakravarti , Jacob B. Dadson , Paul J. Higgins , Babar A. Khan , John J. Moore , Christopher C. Parks , Rohit S. Takalkar
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.