Invention Grant
- Patent Title: Integrated circuit with MOSFET fuse element
- Patent Title (中): 集成电路与MOSFET熔丝元件
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Application No.: US12043914Application Date: 2008-03-06
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Publication No.: US08564023B2Publication Date: 2013-10-22
- Inventor: Hsung Jai Im , Sunhom Paak , Boon Yong Ang
- Applicant: Hsung Jai Im , Sunhom Paak , Boon Yong Ang
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent Scott Hewett; LeRoy D. Maunu
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
At least one MOS parameter of a MOS fuse is characterized to provide at least one MOS parameter reference value. Then, the MOS fuse is programmed by applying a programming signal to the fuse terminals so that programming current flows through the fuse link. The fuse resistance is measured to provide a measured fuse resistance associated with a first logic value. A MOS parameter of the programmed MOS fuse is measured to provide a measured MOS parameter value. The measured MOS parameter value is compared to the reference MOS parameter value to determine a second logic value of the MOS fuse, and a bit value is output based on the comparison.
Public/Granted literature
- US20090224323A1 INTEGRATED CIRCUIT WITH MOSFET FUSE ELEMENT Public/Granted day:2009-09-10
Information query
IPC分类:
