Invention Grant
US08564074B2 Self-limiting oxygen seal for high-K dielectric and design structure
失效
用于高K电介质和设计结构的自限氧气密封
- Patent Title: Self-limiting oxygen seal for high-K dielectric and design structure
- Patent Title (中): 用于高K电介质和设计结构的自限氧气密封
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Application No.: US13306621Application Date: 2011-11-29
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Publication No.: US08564074B2Publication Date: 2013-10-22
- Inventor: Terence B. Hook , Vijay Narayanan , Jay M. Shah , Melanie J. Sherony , Kenneth J. Stein , Helen H. Wang , Chendong Zhu
- Applicant: Terence B. Hook , Vijay Narayanan , Jay M. Shah , Melanie J. Sherony , Kenneth J. Stein , Helen H. Wang , Chendong Zhu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Michael J. LeStrange
- Main IPC: H01L31/119
- IPC: H01L31/119
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including: a high-K dielectric region; a blocking region disposed against at least one surface of the high-K dielectric region and adapted to form an oxidized layer in response to exposure to oxygen; and an oxygen rich region disposed against the blocking region such that the blocking region is interposed between the oxygen rich region and the high-K dielectric region.
Public/Granted literature
- US20130134545A1 SELF-LIMITING OXYGEN SEAL FOR HIGH-K DIELECTRIC, RELATED METHOD AND DESIGN STRUCTURE Public/Granted day:2013-05-30
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