发明授权
- 专利标题： Cut-very-last dual-epi flow
- 专利标题（中）： 切割最后的双面流
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申请号： US13487413申请日： 2012-06-04
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公开(公告)号： US08569152B1公开(公告)日： 2013-10-29
- 发明人: Veeraraghavan S. Basker , Huiming Bu , Kangguo Cheng , Balasubramanian S. Haran , Nicolas Loubet , Shom Ponoth , Stefan Schmitz , Theodorus E Standaert , Tenko Yamashita
- 申请人： Veeraraghavan S. Basker , Huiming Bu , Kangguo Cheng , Balasubramanian S. Haran , Nicolas Loubet , Shom Ponoth , Stefan Schmitz , Theodorus E Standaert , Tenko Yamashita
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Harrington & Smith
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered portion of the array of fins. Adding a second epitaxial material to the fins in the uncovered portion of the array of fins is included in the method. The method also includes covering a second portion of the array of fins using a second masking material and performing a directional etch using the first masking material and the second masking material. Apparatus and computer program products are also described.
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