发明授权
- 专利标题: BEOL compatible FET structrure
- 专利标题(中): BEOL兼容FET结构
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申请号: US13572742申请日: 2012-08-13
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公开(公告)号: US08569803B2公开(公告)日: 2013-10-29
- 发明人: Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
- 申请人: Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- 代理商 Daniel P. Morris
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.
公开/授权文献
- US20120305929A1 BEOL COMPATIBLE FET STRUCTRURE 公开/授权日:2012-12-06