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发明授权
US08569821B2 Semiconductor devices and methods of forming the same 有权
半导体器件及其形成方法

Semiconductor devices and methods of forming the same
摘要：
Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product.
摘要（中）：

提供半导体器件及其形成方法。 该方法可以包括在衬底上形成包括多个元件的栅介质层; 向所述栅介电层提供特定元件; 通过使所述特定元件与所述多个元件中的至少一个元件反应来形成产品; 并移除产品。

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