Invention Grant
- Patent Title: Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
- Patent Title (中): 具有第一半导体器件和多个第二半导体器件的半导体器件布置
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Application No.: US13275151Application Date: 2011-10-17
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Publication No.: US08569842B2Publication Date: 2013-10-29
- Inventor: Rolf Weis , Franz Hirler , Matthias Stecher , Armin Willmeroth , Gerald Deboy , Martin Feldtkeller
- Applicant: Rolf Weis , Franz Hirler , Matthias Stecher , Armin Willmeroth , Gerald Deboy , Martin Feldtkeller
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/088 ; H01L27/098 ; H01L29/161 ; H01L29/20 ; H01L29/778 ; H01L29/788

Abstract:
A semiconductor device arrangement includes a first semiconductor device having a load path, and a number of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor. Each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors. One of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.
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Information query
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