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    Method for Producing a Conductor Line
    1.
    发明申请
    Method for Producing a Conductor Line 有权
    生产导线的方法

    公开(公告)号：US20130280879A1

    公开(公告)日：2013-10-24

    申请号：US13452044

    申请日：2012-04-20

    申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gissibl

    发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gissibl

    IPC分类号： H01L21/02

    CPC分类号： H01L21/76804 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/322 ,  H01L21/44 ,  H01L21/743 ,  H01L21/76802 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

    摘要翻译： 公开了一种用于制造半导体部件的圆形导线的方法。 在该方法中，提供部分完成的半导体部件。 部分完成的半导体部件具有在垂直方向上与底侧间隔开的底侧和顶侧。 还提供了一种蚀刻剂。 在顶侧设置介电层。 介电层具有至少两个不同的区域，当蚀刻剂用蚀刻剂蚀刻时，其表现出不同的蚀刻速率。 随后，在电介质层中形成沟槽，使得沟槽与不同区域中的每一个相交。 然后，通过用不同蚀刻速率的蚀刻剂蚀刻沟槽来加宽沟槽。 通过用导电材料填充加宽的沟槽，形成导体线。

    Method for producing a cylindrical optical component of quartz glass and optically active component obtained by said method
    2.
    发明授权
    Method for producing a cylindrical optical component of quartz glass and optically active component obtained by said method 有权
    用于制造石英玻璃的圆柱形光学部件的方法和通过所述方法获得的光学活性部件

    公开(公告)号：US08509269B2

    公开(公告)日：2013-08-13

    申请号：US12998968

    申请日：2009-12-02

    申请人： Peter Bauer ,  Karsten Braeuer ,  Marco Flach ,  Andreas Langner ,  Richard Schmidt ,  Clemens Schmitt ,  Gerhard Schoetz ,  Matthias Stecher

    发明人： Peter Bauer ,  Karsten Braeuer ,  Marco Flach ,  Andreas Langner ,  Richard Schmidt ,  Clemens Schmitt ,  Gerhard Schoetz ,  Matthias Stecher

    IPC分类号： H01S3/30

    CPC分类号： H01S3/0602 ,  C03B23/207 ,  C03B37/01245 ,  C03B2201/12 ,  C03B2203/02 ,  C03B2203/18 ,  C03B2203/34 ,  H01S3/063 ,  H01S3/06708 ,  H01S3/06745 ,  H01S3/094003 ,  H01S3/094007 ,  H01S3/1603 ,  H01S3/176

    摘要： Cylindrical optical components of quartz glass are known, which have an inner zone made of an inner zone glass, which extends in the direction of the longitudinal axis and is surrounded by a jacket zone made of a jacket zone glass, the average wall thickness thereof varying at least over a part of its length in the direction of the longitudinal axis of the component. The aim of the invention is to provide a method that allows a simple and cost-effective production of such an optical component from quartz glass. A method is proposed according to the invention, comprising the following method steps: (a) providing a first parison made of an inner zone glass, which has a first contact surface on the end face, said contact surface having a conical external contour; (b) providing a second parison from the jacket zone glass; (c) embedding the contact surface with a conical external contour into the jacket zone glass and welding the contact surface to the jacket zone glass, thereby forming a composite parison which has a cone-shaped inner zone area of inner zone glass in a contact area, said inner zone area being surrounded by a jacket zone area having the shape of an inner cone; and (d) elongation of the composite parison to form the optical component or a preproduct of the component.

    摘要翻译： 石英玻璃的圆柱形光学部件是已知的，其具有由内部区域玻璃制成的内部区域，该内部区域在纵向轴线的方向上延伸并被由护套区域玻璃制成的护套区域围绕，其平均壁厚度变化 至少在部件的纵向轴线方向上的长度的一部分上。 本发明的目的是提供一种允许从石英玻璃简单且成本有效地生产这种光学部件的方法。 根据本发明提出了一种方法，包括以下方法步骤：（a）提供由内区玻璃制成的第一型坯，其在端面具有第一接触表面，所述接触表面具有锥形外轮廓; （b）从夹克区玻璃提供第二型坯; （c）将具有锥形外部轮廓的接触表面嵌入夹套区玻璃中并将接触表面焊接到护套区域玻璃上，由此形成复合型坯，其在接触区域中具有内部区域玻璃的锥形内部区域 所述内区域由具有内锥形状的护套区域区域包围; 和（d）复合型坯的伸长以形成光学部件或部件的前产物。

    SEMICONDUCTOR DEVICE AND METHOD
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD 有权
    半导体器件和方法

    公开(公告)号：US20110095364A1

    公开(公告)日：2011-04-28

    申请号：US12984910

    申请日：2011-01-05

    申请人： Matthias Stecher ,  Tobias Smorodin

    发明人： Matthias Stecher ,  Tobias Smorodin

    IPC分类号： H01L29/78 ,  H01L23/522 ,  H01L21/336

    CPC分类号： H01L29/7809 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7395 ,  H01L29/7398 ,  H01L29/7802 ,  H01L29/7816 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

    摘要： A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.

    摘要翻译： 公开了半导体器件和方法。 一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。 其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分 部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

    Semiconductor device and method
    7.
    发明授权
    Semiconductor device and method 有权
    半导体器件及方法

    公开(公告)号：US07888794B2

    公开(公告)日：2011-02-15

    申请号：US12032760

    申请日：2008-02-18

    申请人： Matthias Stecher ,  Tobias Smorodin

    发明人： Matthias Stecher ,  Tobias Smorodin

    IPC分类号： H01L21/00 ,  H01L23/34

    CPC分类号： H01L29/7809 ,  H01L23/4824 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7395 ,  H01L29/7398 ,  H01L29/7802 ,  H01L29/7816 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

    摘要： A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller than an electrical power dissipation in the active region; and a metallization layer arranged with respect to the active region on a surface of the semiconductor device and at least partly overlapping the active area, wherein the metallization layer is divided into a first part, in electrical contact to the first terminal region, and a second part, in electrical contact to the second terminal region, wherein the first and the second part are separated by a gap; and wherein the gap and the inactive region are mutually arranged so that an electrical power dissipation below the gap is reduced compared to an electrical power dissipation below the first part and the second part of the metallization layer.

    摘要翻译： 公开了半导体器件和方法。 一个实施例提供半导体衬底中的有源区，包括第一端区和第二端区。 其中所述有源区域被非活性区域中断，其中所述无源区域中的功率消耗为零或小于所述有源区域中的功率耗散; 以及金属化层，其相对于所述半导体器件的表面上的所述有源区域布置并且至少部分地与所述有源区域重叠，其中所述金属化层被分成与所述第一端子区域电接触的第一部分，以及第二部分 部分地与第二端子区域电接触，其中第一和第二部分被间隙隔开; 并且其中所述间隙和所述非活性区域相互布置，使得与所述金属化层的第一部分和所述第二部分下方的电功率耗散相比，所述间隙之下的电功率耗散减小。

    Semiconductor device and temperature sensor structure for a semiconductor device
    8.
    发明授权
    Semiconductor device and temperature sensor structure for a semiconductor device 有权
    用于半导体器件的半导体器件和温度传感器结构

    公开(公告)号：US07808067B2

    公开(公告)日：2010-10-05

    申请号：US12057944

    申请日：2008-03-28

    申请人： Matthias Stecher ,  Joachim Weyers

    发明人： Matthias Stecher ,  Joachim Weyers

    IPC分类号： H01L31/058

    CPC分类号： H01L25/16 ,  G01K13/00 ,  G01K2217/00 ,  H01L23/34 ,  H01L27/0248 ,  H01L29/7817 ,  H01L29/7818 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region.

    摘要翻译： 一种用于半导体器件的温度传感器结构。 一个实施例提供了包括半导体器件的半导体衬底。 半导体器件的耗散区域与半导体衬底的主表面相邻。 第一层布置设置在与半导体器件的耗散区相邻的半导体衬底的主表面上。 第二层布置设置在第一层布置上，其间具有用于电隔离的绝缘层。 第一层和第二层布置和绝缘层在散热区上方的主表面上形成层结构。 电路元件设置在第二层布置中，电路元件具有温度依赖特性并且热耦合到耗散区。

    Power semiconductor device with improved heat dissipation
    9.
    发明授权
    Power semiconductor device with improved heat dissipation 有权
    功率半导体器件具有改善的散热性能

    公开(公告)号：US07732848B2

    公开(公告)日：2010-06-08

    申请号：US11756389

    申请日：2007-05-31

    申请人： Matthias Stecher

    发明人： Matthias Stecher

    IPC分类号： H01L23/62 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L23/3677 ,  H01L29/41708 ,  H01L29/41725 ,  H01L29/41741 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device is disclosed that improves heat dissipation by providing blind contact elements on a dielectric layer. Embodiments are disclosed which include a substrate having at least one electrode contact area accessible at a surface of the substrate and a surface adjacent the electrode contact area, a dielectric layer disposed above the surface; an intermediate oxide layer disposed above the dielectric layer, a current conducting metallization layer disposed above the intermediate oxide layer; and at least one contact element vertically extending from the dielectric layer through the intermediate oxide layer to the metallization layer above the surface adjacent the electrode contact area, the at least one contact element having a heat conductivity that is higher than that of the intermediate oxide layer.

    摘要翻译： 公开了一种通过在介电层上提供盲接触元件来改善散热的半导体器件。 公开了包括具有在基板的表面可访问的至少一个电极接触区域和与电极接触区域相邻的表面的基板，设置在表面上方的电介质层的基板; 设置在电介质层上方的中间氧化物层，设置在中间氧化物层上方的导电金属化层; 以及至少一个接触元件，其从所述介电层通过所述中间氧化物层垂直延伸到邻近所述电极接触区域的表面上方的所述金属化层，所述至少一个接触元件具有比所述中间氧化物层高的导热系数 。