发明授权
- 专利标题： Hole first hardmask definition
- 专利标题（中）： 孔第一硬掩模定义
-
申请号： US13618908申请日： 2012-09-14
-
公开(公告)号： US08569849B2公开(公告)日： 2013-10-29
- 发明人: Wei-Hang Huang , Shih-Chang Liu , Chern-Yow Hsu , Fu-Ting Sung , Chia-Shiung Tsai
- 申请人： Wei-Hang Huang , Shih-Chang Liu , Chern-Yow Hsu , Fu-Ting Sung , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top electrode may have slanted sidewalls. The MTJ stack may be formed by depositing corresponding MTJ layers. A patterned mask may be formed and patterned over the MTJ layers to form an opening defining the top electrode. The opening is filled with a conductive material to form the top electrode. The top electrode is then used as a mask to pattern the MTJ layers, thereby forming a MTJ stack.
公开/授权文献
- US20130043549A1 Hole First Hardmask Definition 公开/授权日：2013-02-21
信息查询
IPC分类:
